TK18E10K3,S1X(S Allicdata Electronics
Allicdata Part #:

TK18E10K3S1X(S-ND

Manufacturer Part#:

TK18E10K3,S1X(S

Price: $ 0.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 100V 18A TO-220AB
More Detail: N-Channel 100V 18A (Ta) Through Hole TO-220-3
DataSheet: TK18E10K3,S1X(S datasheetTK18E10K3,S1X(S Datasheet/PDF
Quantity: 1000
50 +: $ 0.85806
Stock 1000Can Ship Immediately
$ 0.95
Specifications
Series: U-MOSIV
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 42 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Description

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TK18E10K3,S1X Transistors - FETs, MOSFETs - Single are widely used in many applications for their superior performance. TK18E10K3,S1X transistors - FETs, MOSFETs - single are mainly composed of an insulated gate and a channel region. They are incorporated into circuits to be used as a switch as it has the ability to control a large current. The type of transistor that TK18E10K3,S1X belongs to, FETs, serves mainly as a switch and amplifier. The insulated gates located on the transistor act as the control voltage, adjusting the conductivity of the channel zone, which enables the transistor to turn ON and OFF. When the voltage current flows through the gate-channel region, a conductive path can be created, allowing current to flow between the source and drains depending on the voltage applied.The source of TK18E10K3,S1X is the starting point of an electric current, the drain is the endpoint, and the gate is where the voltage current is applied to control the current flow. When gate-source voltage is applied, electrons are released, creating a conductive path for current to flow. The drain receives the electric current, and depending on the gate current and drain current that has been applied to the system, the transistor will act either as an amplifying device or as a switch.The advantages of using TK18E10K3,S1X transistors - FETs, MOSFETs - single in applications is that it does not require any additional power supply due to its insulated gate. This feature allows it to operate with a very low voltage and current. Additionally, most FETs exhibit extremely low leakage current compared to other types of transistors, allowing it to deliver higher precision and accuracy.The operating temperature range of TK18E10K3,S1X transistors - FETs, MOSFETs - Single is -55°C to +175°C and its storage temperature ranges from -55°C to +175°C. Its peak DC forward blocking voltage is 18V and its peak DC breakdown voltage is 10K. TK18e10K3,S1X has a high dielectric strength of 1X, high surge current capability and can dissipate up to 0.55 W of power without damage.TK18E10K3,S1X Transistors - FETs, MOSFETs - single are mainly used as switches as it allows maximum current transfer from the source to the drain with a very low gate current. Since it has a low gate current, this makes it ideal for electronic circuits that require minimal power. The FETs can be used for gate switching and providing power to logic ICs and other small components. They can also provide amplification due to their fast switching times. This can be seen in numerous applications, like voltage regulators, linear amplifiers, and switching converters.Overall, TK18E10K3,S1X transistors - FETs, MOSFETs - single are highly dependable and versatile components which are used in various applications due to their superior performance. They are used as switches and they can also provide amplification due to their fast switching times. With its wide operating temperature range and high dielectric strength, it is perfect for systems that require low power energy. Its low leakage current also allows for designers to create electronic circuits that are even more precise and accurate. Moreover, with its medium surge current capability, it can easily handle increased current without damaging its components. With these amazing features, TK18E10K3,S1X transistors - FETs, MOSFETs - single are sure to be widely used for years to come.

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