TK25E06K3,S1X(S Allicdata Electronics

TK25E06K3,S1X(S Discrete Semiconductor Products

Allicdata Part #:

TK25E06K3S1X(S-ND

Manufacturer Part#:

TK25E06K3,S1X(S

Price: $ 0.75
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 60V 25A TO-220AB
More Detail: N-Channel 60V 25A (Ta) 60W (Tc) Through Hole TO-22...
DataSheet: TK25E06K3,S1X(S datasheetTK25E06K3,S1X(S Datasheet/PDF
Quantity: 1000
50 +: $ 0.67347
Stock 1000Can Ship Immediately
$ 0.75
Specifications
Series: U-MOSIV
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: --
Power Dissipation (Max): 60W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Description

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The TK25E06K3,S1X(S is a MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) belonging to the family of single transistors. It is widely used for power management such as for switching or amplifying electronic signals. For example, this device can be used for amplifying multiple audio signals, controlling DC motors, or even simply switching on/off a device.

This MOSFET is a type of field-effect transistor that uses a stream of electrons to control electrical signals and power flow. This MOSFET includes a junction between a source and drain, as well as a gate for further amplification and switching capability. The TK25E06K3,S1X(S has a drain-source voltage of 25V, a maximum drain current of 6A, and an operating temperature range of -55℃ to +150℃.

The TK25E06K3,S1X(S has numerous applications within pulse width modulation, audio amplifiers and motor controllers. For example, when used in pulse width modulation, a device such as this can be used to regulate voltages, typically through a feedback loop – as the voltage changes, the pulse width is regulated to maintain constant voltage. In the audio amplifier, this MOSFET can be used for power amplification, reducing harmonic distortion and providing higher efficiency. Lastly, in the motor controllers, this MOSFET can be used to increase and decrease the speed of the motor, allowing it to be regulated.

The TK25E06K3,S1X(S MOSFET works on an ON/OFF principle. When a gate voltage is applied to the gate lead, the MOSFET is turned on and current can flow freely between the source and drain. This can be done by applying a source voltage to the source, a drain voltage to the drain, and a control voltage to the gate. When a control voltage is applied, the gate voltage increases, opening up the channel between the source and drain and allowing current flow. When no gate voltage is applied, the channel is effectively shut off.

In summary, the TK25E06K3,S1X(S is a type of single transistor MOSFET that is used in power management and pulse-width modulation applications. It features a drain-source voltage of 25V, a maximum drain current of 6A, and an operating temperature range of -55℃ to +150℃. This device can be used for many purposes, such as audio amplifiers, motor controllers, and pulse-width modulation. Ultimately, it is a reliable and durable device for regulating electronic signals and power flow.

The specific data is subject to PDF, and the above content is for reference

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