Allicdata Part #: | TK25E60XS1X-ND |
Manufacturer Part#: |
TK25E60X,S1X |
Price: | $ 3.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 600V 25A TO-220AB |
More Detail: | N-Channel 600V 25A (Ta) 180W (Tc) Through Hole TO-... |
DataSheet: | TK25E60X,S1X Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 2.92320 |
50 +: | $ 2.34738 |
100 +: | $ 2.13872 |
500 +: | $ 1.73184 |
1000 +: | $ 1.46059 |
Vgs(th) (Max) @ Id: | 3.5V @ 1.2mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | DTMOSIV-H |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK25E60X,S1X belongs to the category of single metal oxide semiconductor field-effect transistors, commonly known as MOSFETs. It is a type of transistor that allows electric current to flow through its channel as long as its gate voltage is positive. The TK25E60X,S1X enables the current to be switched on and off using only a very small amount of input current. As such, it finds a wide range of applications in digital logic and computing devices such as microprocessors, memory chips and power supplies.
The basis of the MOSFET is the metal oxide-semiconductor junction between the source and drain terminals. When a positive voltage is applied to the gate terminal, an electric field is created on the oxide layer that creates a conductive channel between the source and drain terminals. This channel is known as an inversion layer. At the point where the inversion layer begins to form, the transistor is said to be in the “turn-on” state, where current can flow. Similarly, when the gate voltage is decreased to below the turn-on threshold, the inversion layer dissipates and no current flows through the transistor.
The TK25E60X,S1X is a “n-channel” MOSFET, meaning it is a type of MOSFET whose conduction channel is composed of n-type semiconductor material. These types of transistors generally have lower levels of resistance in the conducting channel than other types of MOSFETs, such as p-channel transistors. This low resistance allows the TK25E60X,S1X to pass a larger amount of current than other types of MOSFETs, making it ideal for high-current applications.
The TK25E60X,S1X can be used in both digital and analog circuits. In digital circuits, it is used as a switch to control the flow of current. This allows signals to be switched on and off in a very short amount of time, making the MOSFET ideal for high speed applications. In analog circuits, the TK25E60X,S1X can be used for voltage regulation, motor speed control and power management. The MOSFET can also be used as a variable resistor in circuits.
In summary, the TK25E60X,S1X is a single metal oxide semiconductor field-effect transistor, or MOSFET, which is often used in digital and analog circuit applications. Its low resistance and fast switching capabilities make it well-suited for high-speed and high-current applications. This type of transistor enables the control of electric current with a very low input current, allowing it to be used in a variety of applications, including voltage regulation, motor speed control and power management.
The specific data is subject to PDF, and the above content is for reference
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