Allicdata Part #: | TK30E06N1S1X-ND |
Manufacturer Part#: |
TK30E06N1,S1X |
Price: | $ 0.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 60V 43A TO-220 |
More Detail: | N-Channel 60V 43A (Ta) 53W (Tc) Through Hole TO-22... |
DataSheet: | TK30E06N1,S1X Datasheet/PDF |
Quantity: | 111 |
1 +: | $ 0.71820 |
50 +: | $ 0.55478 |
100 +: | $ 0.48315 |
500 +: | $ 0.35790 |
1000 +: | $ 0.28632 |
Vgs(th) (Max) @ Id: | 4V @ 200µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 53W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1050pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK30E06N1,S1X is a transistor that falls within the category of field effect transistors (FETs) and specifically, single MOSFETs. FETs are a type of transistor designed to control the high-voltage flows within a semiconductor material, largely used in semiconductor circuits.MOSFETs, or metal-oxide-semiconductor field-effect transistors, are an efficient type of FET that are widely used in computer circuits and electronics. Single MOSFETs are the simplest type of transistor and use a single gate circuit to control the current flow. The TK30E06N1,S1X is one of these single-gate transistors.The important difference between FETs and standard transistors is that they are constructed with a thin layer of insulating material between the gate and the source. This layer is called the gate dielectric layer and it prevents current leakage between the gate and the source, resulting in more efficient connections.The TK30E06N1,S1X is designed for use in medium/high frequency applications and offers a significant FET switching speed, featuring low losses at zero current, low gate charge and low gate resistance. It uses a MOS architecture and achieves high reliability.The TK30E06N1,S1X is ideal for applications such as switch mode power supplies, inverter circuits, and high-speed digital communications equipment. It has the ability to handle up to 10A of drain current and operates with a wide range of output voltages up to 40 volts. The transistor is made of gallium arsenide material, which is suitable for applications up to 17 GHz.The working principle of the TK30E06N1,S1X is based on the use of “voltage-controlled current sources”. This type of transistor works by regulating the current flow between the source and drain connections, with the particular current level being determined by the voltage across the gate electrodes. The voltage across the gated electrodes will determine when the current is switched on and off and will also control the level of current that is allowed to pass through.The TK30E06N1,S1X offers a robust solution for controlling power flow in many types of circuits, allowing users to precisely control the current flow between different components. It is ideal for use in high-frequency applications due to its high reliability, fast switching speed, and low gate losses. Additionally, the device is able to handle up to 10A of drain current, making it an ideal solution for many types of power management systems.
The specific data is subject to PDF, and the above content is for reference
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