TK30E06N1,S1X Allicdata Electronics
Allicdata Part #:

TK30E06N1S1X-ND

Manufacturer Part#:

TK30E06N1,S1X

Price: $ 0.79
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 60V 43A TO-220
More Detail: N-Channel 60V 43A (Ta) 53W (Tc) Through Hole TO-22...
DataSheet: TK30E06N1,S1X datasheetTK30E06N1,S1X Datasheet/PDF
Quantity: 111
1 +: $ 0.71820
50 +: $ 0.55478
100 +: $ 0.48315
500 +: $ 0.35790
1000 +: $ 0.28632
Stock 111Can Ship Immediately
$ 0.79
Specifications
Vgs(th) (Max) @ Id: 4V @ 200µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 53W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Series: U-MOSVIII-H
Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TK30E06N1,S1X is a transistor that falls within the category of field effect transistors (FETs) and specifically, single MOSFETs. FETs are a type of transistor designed to control the high-voltage flows within a semiconductor material, largely used in semiconductor circuits.MOSFETs, or metal-oxide-semiconductor field-effect transistors, are an efficient type of FET that are widely used in computer circuits and electronics. Single MOSFETs are the simplest type of transistor and use a single gate circuit to control the current flow. The TK30E06N1,S1X is one of these single-gate transistors.The important difference between FETs and standard transistors is that they are constructed with a thin layer of insulating material between the gate and the source. This layer is called the gate dielectric layer and it prevents current leakage between the gate and the source, resulting in more efficient connections.The TK30E06N1,S1X is designed for use in medium/high frequency applications and offers a significant FET switching speed, featuring low losses at zero current, low gate charge and low gate resistance. It uses a MOS architecture and achieves high reliability.The TK30E06N1,S1X is ideal for applications such as switch mode power supplies, inverter circuits, and high-speed digital communications equipment. It has the ability to handle up to 10A of drain current and operates with a wide range of output voltages up to 40 volts. The transistor is made of gallium arsenide material, which is suitable for applications up to 17 GHz.The working principle of the TK30E06N1,S1X is based on the use of “voltage-controlled current sources”. This type of transistor works by regulating the current flow between the source and drain connections, with the particular current level being determined by the voltage across the gate electrodes. The voltage across the gated electrodes will determine when the current is switched on and off and will also control the level of current that is allowed to pass through.The TK30E06N1,S1X offers a robust solution for controlling power flow in many types of circuits, allowing users to precisely control the current flow between different components. It is ideal for use in high-frequency applications due to its high reliability, fast switching speed, and low gate losses. Additionally, the device is able to handle up to 10A of drain current, making it an ideal solution for many types of power management systems.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "TK30" Included word is 3
Part Number Manufacturer Price Quantity Description
TK30A06N1,S4X Toshiba Semi... 0.75 $ 620 MOSFET N-CH 60V 30A TO-22...
TK30E06N1,S1X Toshiba Semi... 0.79 $ 111 MOSFET N-CH 60V 43A TO-22...
TK30S06K3L(T6L1,NQ Toshiba Semi... 0.41 $ 1000 MOSFET N-CH 60V 30A DPAK-...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics