Allicdata Part #: | TK30S06K3L(T6L1NQ-ND |
Manufacturer Part#: |
TK30S06K3L(T6L1,NQ |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 60V 30A DPAK-3 |
More Detail: | N-Channel 60V 30A (Ta) 58W (Tc) Surface Mount DPAK... |
DataSheet: | TK30S06K3L(T6L1,NQ Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.37529 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK+ |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 58W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | U-MOSIV |
Rds On (Max) @ Id, Vgs: | 18 Ohm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TK30S06K3L(T6L1,NQ is a type of transistor which falls under the category of field effect transistors and specifically, single MOSFETs. Field effect transistors are unipolar transistors and are 3-terminal devices which have the main characteristic of controlling a certain current by changing the voltage through one of the terminals, called the gate terminal. Although being components with a simple function, transistors play an essential role in the electronics industry.
The TK30S06K3L(T6L1,NQ is specifically a single n-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which provides low on resistance and fast switching times. It is also highly thermally efficient, as it dissipates roughly 10% of the total power that passes through it. All of these advantages make it a popular choice to be used in many types of applications.
One of the most common applications of the TK30S06K3L(T6L1,NQ is in power supply circuits. As it is able to produce large currents with a relatively low gate voltage, it is utilized in voltage regulators, secondary-side synchronous rectification converters and DC-DC converters to regulate the power flow. In addition to this, these transistors are found in motor speed controlis, audio amplifiers, lighting systems and in cell phones, among many other gadgets.
Moreover, the TK30S06K3L(T6L1,NQ can be used as a power switch in order to control the power going to a certain device. This transistor can reduce the power consumption significantly since it can easily be used to switch a power line on and off. In addition, it can be found in motor control circuits, such as motor speed controls and motor starters.
The TK30S06K3L(T6L1,NQ works in accordance to the principles of field effect transistors. Specifically, the main element of field effect transistors is the gate electrode which is made of a metal oxide semiconductor material (MOS for short). The gate is placed near the source and drain and thus is able to influence the current flowing between them. When a voltage is applied to the gate terminal, free electrons from the MOS material form a electric field in the region that surrounds the area between the source and drain. This electric field causes an alteration of the operation of the FET as varying levels of current are able to pass through it depending on the electric field.
In conclusion, the TK30S06K3L(T6L1,NQis a type of single n-channel enhancement mode Metal Oxide Semiconductor Field Effect Transistor which is highly efficient in terms of power handling and switching times. Its efficient characteristics make it a popular choice to be used in many types of applications, such as power supply circuits, motor speed controlis, audio amplifiers, lighting systems and in cell phones. It also works in accordance to the principles of field effect transistors, where the main element is the gate electrode.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TK30A06N1,S4X | Toshiba Semi... | 0.75 $ | 620 | MOSFET N-CH 60V 30A TO-22... |
TK30E06N1,S1X | Toshiba Semi... | 0.79 $ | 111 | MOSFET N-CH 60V 43A TO-22... |
TK30S06K3L(T6L1,NQ | Toshiba Semi... | 0.41 $ | 1000 | MOSFET N-CH 60V 30A DPAK-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...