| Allicdata Part #: | TK34A10N1S4X-ND |
| Manufacturer Part#: |
TK34A10N1,S4X |
| Price: | $ 1.23 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 100V 34A TO-220 |
| More Detail: | N-Channel 100V 34A (Tc) 35W (Tc) Through Hole TO-2... |
| DataSheet: |  TK34A10N1,S4X Datasheet/PDF |
| Quantity: | 50 |
| 1 +: | $ 1.12140 |
| 50 +: | $ 0.90569 |
| 100 +: | $ 0.81509 |
| 500 +: | $ 0.63394 |
| 1000 +: | $ 0.52526 |
| Vgs(th) (Max) @ Id: | 4V @ 500µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220SIS |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 35W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| Series: | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 17A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TK34A10N1,S4X is a field-effect transistor that is incorporated into a range of finished products and applications. The transistor is generally classified as a single, metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET functions as an electronic switch allowing more current to flow through a circuit when it is closed and less current when it is open.A MOSFET operates in three distinct regions: cutoff, ohmic, and saturation. In cutoff mode, the device is turned off and does not conduct current. When operated in ohmic mode, the device acts as a linear resistor and allows for controlled current flow, whereas in saturation mode, the device is fully on and allows the maximum current through.The TK34A10N1,S4X is a unipolar device meaning it is made of just one type of semiconductor material. It is a voltage-gated MOSFET with a insulated-gate structure. This allows the device to be easily and quickly turned on or off with a slight change in the applied voltage.The TK34A10N1,S4X has a low input capacitance, low on-state resistance, and low power loss. This makes the device suitable for a wide range of applications such as switching mode power supplies, motor drives, battery protection, and automotive telematics.The TK34A10N1,S4X can also be used for analog circuit applications; due to its low input and output offset voltages, low noise, and fast switching speed, making it suitable for audio products and instrumentation amplifiers.In conclusion, the TK34A10N1,S4X is a versatile, high-performance MOSFET that is suitable for a wide range of RF, switching, and analog applications. It has low on-state resistance and low input and output capacitance, which makes it ideal for high-frequency switching. The device’s insulated gate structure allows the device to be easily and quickly turned on or off with a slight change in the applied voltage. With its high-performance characteristics and versatile applications, the TK34A10N1,S4X is a great choice for any type of electronics application.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TK3434 | 3M (TC) | 77.83 $ | 1000 | HOME TAPE KIT - PREMIUMHo... |
| TK34E10N1,S1X | Toshiba Semi... | 1.16 $ | 41 | MOSFET N-CH 100V 75A TO-2... |
| TK34A10N1,S4X | Toshiba Semi... | 1.23 $ | 50 | MOSFET N-CH 100V 34A TO-2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...