| Allicdata Part #: | TK34E10N1S1X-ND |
| Manufacturer Part#: |
TK34E10N1,S1X |
| Price: | $ 1.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 100V 75A TO-220 |
| More Detail: | N-Channel 100V 75A (Tc) 103W (Tc) Through Hole TO-... |
| DataSheet: |  TK34E10N1,S1X Datasheet/PDF |
| Quantity: | 41 |
| 1 +: | $ 1.05210 |
| 50 +: | $ 0.84395 |
| 100 +: | $ 0.73842 |
| 500 +: | $ 0.57265 |
| 1000 +: | $ 0.45209 |
| Vgs(th) (Max) @ Id: | 4V @ 500µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 103W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| Series: | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 17A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The TK34E10N1,S1X is a transistor device in the “Transistors - FETs, MOSFETs - Single” category. It is a field effect transistor (FET) which is used to amplify or switch electrical signals. The TK34E10N1,S1X utilizes a single control voltage or signal to adjust or switch the current flow between its two terminals.
The TK34E10N1,S1X is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) which is one of the most commonly used semiconductor devices today. As a MOSFET, it has a source (S), a drain (D), and a gate (G). In order for it to work, a voltage is applied to the gate in order to control the current flow from the source to the drain, which is the hallmark of a MOSFET device.
The TK34E10N1,S1X has a variety of applications, including audio power amplifiers, power switching, signal boosting, signal routing, signal protocols, voltage regulators, current triggers, and signal processing. This device is capable of amplifying very small signals while being extremely efficient in power and in signal loss. It is also used in some high-frequency signal switching applications, as it can operate up to 10GHz frequency range while still providing excellent signal-to-noise ratios.
The TK34E10N1,S1X is known for its low power operation, making it a popular choice for portable and battery-powered applications. Additionally, it has a high energy efficiency as well as excellent thermal stability. As such, it is often seen in motor and transformer control systems, motor inverter circuits, and high-power power supply circuits.
One of the main advantages of the TK34E10N1,S1X is its ability to maintain very low levels of noise. It produces a very low level of switching noise, allowing for a reliable signal transmission free of interference. Additionally, the device has a high voltage tolerance, allowing for the handling of voltages up to 200V with ease.
The TK34E10N1,S1X is a versatile and reliable transistor device which is suitable for many different applications. It has a wide range of features, including a low power consumption, a high energy efficiency, a low noise level, and a high voltage tolerance. Due to its many features, the TK34E10N1,S1X is an ideal choice for many electrical applications.
The specific data is subject to PDF, and the above content is for reference
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