TK4P55DA(T6RSS-Q) Allicdata Electronics
Allicdata Part #:

TK4P55DA(T6RSS-Q)-ND

Manufacturer Part#:

TK4P55DA(T6RSS-Q)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 550V 3.5A DPAK-3
More Detail: N-Channel 550V 3.5A (Ta) 80W (Tc) Surface Mount D-...
DataSheet: TK4P55DA(T6RSS-Q) datasheetTK4P55DA(T6RSS-Q) Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 80W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Series: π-MOSVII
Rds On (Max) @ Id, Vgs: 2.45 Ohm @ 1.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 550V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TK4P55DA (T6RSS-Q) is a power transistor developed by Toshiba. The transistor is a single-channel CoolMOS® Power MOSFET for use in AC/DC converters, DC/DC converter, motor drives and lighting applications. Devices within the TK4P55DA series are offered in SOT-227 package and are capable of handling high drain currents at high switching frequencies.

The TK4P55DA is a n-channel, insulated-gate bipolar transistor (IGBT) providing low on-state resistance and high switching speeds. An IGBT consists of both a n-type and a p-type MOSFET integrated into one device, the body, and is composed of the emitter, base and collector junctions of a bipolar transistor.

The gate terminal of the TK4P55DA is separated from the drain and source regions by an oxide film. This means that the gate has to be connected externally and can therefore be used to control current flow. This provides an effective method of controlling current in power switching systems.

The TK4P55DA is designed for use in various AC/DC and DC/DC converter applications. This includes application in the automotive and consumer electronics industries. Devices in the TK4P55DA series offer improved safe-operating area (SOA) performances, low on-resistance, and high switching frequencies when compared with conventional IGBTs.

The working principle of the TK4P55DA is based on the principle of MOSFETs. In operation, a voltage is applied to the gate of the device. This gate voltage, in turn, causes an inversion layer to form between the source and the drain. If the applied voltage exceeds the threshold voltage, the MOSFET will then be in the conducting state and electrical current will pass through the transistor. If the voltage is lower than the threshold voltage, the MOSFET will remain in the non-conducting state.

In the application of AC/DC and DC/DC converters, the TK4P55DA transistor works to precisely regulate the amount of current flowing through the circuit by switching the MOSFET. This ensures that the voltage levels are consistent and that there are no power fluctuations or losses.

The TK4P55DA (T6RSS-Q) is a powerful transistor designed for use in many power switching applications. It is an insulated-gate bipolar transistor with high switching speeds and low on-state resistances. It works based on the principle of MOSFET transistors,in which the gate voltage is used to control the current passing through the device. This transistor is suitable for use in AC/DC and DC/DC converter applications, providing users with a reliable and efficient switching solution.

The specific data is subject to PDF, and the above content is for reference

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