TK4P60DB(T6RSS-Q)

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The TK4P60DB (T6RSS-Q) is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from Toshiba’s TMOS superjunction series. It is a single N-channel MOSFET chip, offering superior withstand voltage and saturation voltage characteristics, and supports higher frequency operation. It can handle large pulses of high peak power and can also be used in switching circuits and motor control applications.

The TK4P60DB MOSFET is applicable for a wide range of circuit designs, including amplifier, relay, solenoid, audio and video amplifiers, data transmission, and cellular platform operations. Its application in amplifier applications is especially suited, making the best use of its superior dynamic withstand voltage characteristic, enabling high input power and speaker output power. This product is suitable for high performance DC/DC converters, AC/DC converters, and POL (Point of Load) DC/DC converters. Furthermore, it can be used in automotive lighting, safety systems, and infotainment systems.

The working principle of this MOSFET is based on the gate capacitance model. The gate capacitance is the ability of a capacitor to hold charge on its gate and to control the current flow through the MOSFET device when a voltage is applied to the gate. The gate capacitance of a MOSFET controls how easily a given voltage, or current, can be switched on and off. In addition, the drain-source voltage and the gate voltage are correlated. As this voltage rises, more of the drain-source voltage is dropped across the channel, causing it to close and become a low impedance path. This results in a higher current flow through the MOSFET. Conversely, if the gate voltage is decreased, the drain-source voltage is reduce and the channel is not maintained, resulting in a lower current flow through the MOSFET.

In summary, the TK4P60DB (T6RSS-Q) is a single N-channel MOSFET device with superior dynamic withstand voltage characteristics, enabling it to perform in high performance DC/DC converter, AC/DC converter, and POL DC/DC converter designs. It is suitable for a wide range of applications, including design of amplifiers, resulting in high input power and speaker output power. Its working principle is based on the gate capacitance model, which determines how easily a given voltage can be switched on and off and how the drain-source voltage and gate voltage are correlated.

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