Allicdata Part #: | TK50E06K3(S1SS-Q)-ND |
Manufacturer Part#: |
TK50E06K3(S1SS-Q) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 60V 50A TO-220AB |
More Detail: | MOSFET N-CH 60V 50A TO-220AB |
DataSheet: | TK50E06K3(S1SS-Q) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | U-MOSIV |
Packaging: | Tube |
Part Status: | Active |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
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What is the TK50E06K3(S1SS-Q)? It is a single-gate MOSFET transistor. It is a Small Signal MOSFET Transistor, with a maximum drain current of 750mA. The TK50E06K3 was designed to provide efficient and reliable switching and amplification in many types of circuits.
Application Field
The TK50E06K3(S1SS-Q) can be used in many different types of applications. It is a low voltage, high current transistor that can be used in switching, amplifying, and protection circuits. It is suitable for use in power management applications such as AC/DC converters, DC/DC converters, and DC motor speed controllers. It is also suitable for continuous wave applications such as waveform generators and transceivers. The TK50E06K3(S1SS-Q) also has a low on-resistance and a low gate voltage drop which make it ideal for applications such as high-speed switching and voltage regulation.
Working Principle
The TK50E06K3(S1SS-Q) is a type of four-terminal electronic device composed of semiconductor materials. It operates in the source-drain-gate configuration to produce a desired output in response to an input signal. Its operation is based on the effect of a voltage applied to its gate terminal on the current flowing between its drain and source terminals. When a positive voltage is applied to its gate terminal, the channel between the drain and source terminals is opened, allowing current to flow between them. Conversely, when a negative voltage is applied to its gate terminal, the channel is closed, preventing current from flowing. Thus, the application of a gate voltage can regulate the current flow between the source and drain terminals.
The TK50E06K3(S1SS-Q) can also be used as a voltage regulator. This is achieved by controlling the current flow through it with a bias resistor. When a load is connected across the drain and source terminals of the MOSFET, the current passing through it is regulated by the gate voltage applied to it. The voltage at the load is then determined by the current passing through it, which is regulated by the gate voltage.
The TK50E06K3(S1SS-Q) is a versatile and reliable single-gate MOSFET transistor. It is suitable for use in a wide range of applications such as power management, continuous wave applications, and voltage regulation. Its low on-resistance and low gate voltage drop make it an ideal choice for these types of circuits.
The specific data is subject to PDF, and the above content is for reference
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