TK50P03M1(T6RSS-Q) Allicdata Electronics
Allicdata Part #:

TK50P03M1(T6RSSQ)TR-ND

Manufacturer Part#:

TK50P03M1(T6RSS-Q)

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 30V 50A DP TO252-3
More Detail: N-Channel 30V 50A (Ta) 47W (Tc) Surface Mount DP
DataSheet: TK50P03M1(T6RSS-Q) datasheetTK50P03M1(T6RSS-Q) Datasheet/PDF
Quantity: 1000
2000 +: $ 0.24583
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 47W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25.3nC @ 10V
Series: U-MOSVI-H
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TK50P03M1 (T6RSS-Q) is a field effect transistor (FET) that was developed by Tokyo Semiconductor, Inc. It is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and is used for switching and amplifying applications. The TK50P03M1 is the successor to the TK44P01M0 series of MOSFETs.

The TK50P03M1 has a wide application range and is suitable for use in a variety of electronic systems. It is particularly suitable for switching applications that require high speed and low power consumption. It can also be used in amplifier circuits, as it has high input impedance, low noise and high current gain. In addition, its small size allows it to be embedded in other integrated systems.

The working principle of the TK50P03M1 is based on the fact that it is a MOSFET. MOSFETs rely on the channel of an field effect transistor (FET) to control the current flow. A voltage applied to the gate of the FET allows electrons to "pass through", allowing a current to flow. This current is then amplified and regulated by the FET.

The TK50P03M1 is an N-channel enhancement type MOSFET. This type of MOSFET works differently than the P-channel type, as it requires a certain amount of voltage applied to its gate before the device will allow a current to flow. This voltage is called a "threshold voltage" and is measured in volts. When the voltage applied to the gate is equal to or greater than this threshold voltage, electrons will begin to flow.

The TK50P03M1 has a static drain-to-source resistance of 500mΩ and a continuous drain current of 2A. It also has a low power on resistance of 0.6mΩ and can support drain voltages up to 20V. This makes it ideal for use in power management applications.

The TK50P03M1 is a versatile and reliable device for use in high speed, low power applications. It is a single FET device that can be used for switching and amplifying. Its static drain-to-source resistance and low power on resistance make it suitable for power management applications. Its small size makes it ideal for embedded applications.

The specific data is subject to PDF, and the above content is for reference

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