
Allicdata Part #: | TK560A60YS4X-ND |
Manufacturer Part#: |
TK560A60Y,S4X |
Price: | $ 0.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 600V 7A TO220SIS |
More Detail: | N-Channel 600V 7A (Tc) 30W Through Hole TO-220SIS |
DataSheet: | ![]() |
Quantity: | 121 |
1 +: | $ 0.88830 |
50 +: | $ 0.71001 |
100 +: | $ 0.62124 |
500 +: | $ 0.48180 |
1000 +: | $ 0.38036 |
Vgs(th) (Max) @ Id: | 4V @ 240µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 30W |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 380pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 14.5nC @ 10V |
Series: | DTMOSV |
Rds On (Max) @ Id, Vgs: | 560 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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TK560A60Y,S4X is a single-ended n-channel enhancement-mode MOSFET transistor. It is an integrated circuit that utilises metal–oxide–semiconductor structure, also known as Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). This device is designed to operate in high-frequency applications.
TK560A60Y,S4X is a member of the TK family, which is a series of small, low-power, highly efficient and fast switching semiconductor devices. The device is capable of providing up to 600V output voltage, 80A maximum output current, and a feature-rich package. It also provides a high frequency operation of up to 10 MHz.
The TK560A60Y,S4X has many features, such as low on-resistance and gate threshold voltage, high input impedance, and high power efficiency. Additionally, this device has high-current-carrying capability and high speed performance. This device is also suitable for high-temperature operations.
The application field for TK560A60Y,S4X can include, but is not limited to, computing, communication, industrial, and automotive applications. In computing, it can be used in amplifiers and sensing elements. In communication, it can be used in power amplifiers and digital-to-analog converters. In industrial applications, it can be used in motor drive systems, relays, and transformers. For automotive applications, it can be used in power electronics and signal conditioning circuits.
The working principle of TK560A60Y,S4X is based on the Metal Oxide Semiconductor Structure. This structure operates on the principle that when a voltage is applied to the gate of the transistor, a current flows between the source and drain terminals. This current is determined by the magnitude of the gate voltage. This current flow is then regulated by the threshold voltage of the device, which is based on the material used in the construction of the MOSFET. This voltage determines whether the device will be in the on state or off state.
The TK560A60Y,S4X is a very effective, efficient and reliable device for many different applications. Its wide range of features and capabilities make it ideal for use in high-frequency and high-temperature environments. Additionally, its working principle is accessible to anyone with a basic understanding of electronics, allowing designers to create devices and solutions based on this technology.
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