TK56E12N1,S1X

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Transistors - FETs, MOSFETs - Single

The TK56E12N1,S1X is a single-gate, metal–oxide–semiconductor field-effect transistor (MOSFET) device. It is a type of FET that controls the flow of electrons between a source and a drain using a gate which is an electrically isolated metal plate between the two other regions. A key characteristic of MOSFET technology is that it only requires a low voltage (five to ten volts) to switch it on.

MOSFETs are used in a variety of applications, from digital logic to power switching. In digital logic applications, they are used as the primary switching devices. They are used in applications with amplifiers and digital filters, where they are used as the primary switching device for amplifying and controlling signals. In power switching applications, a MOSFET’s gate voltage is used to control the flow of current between a source and a drain. This is used in controlling the flow of charge in power electronic devices, such as motor controllers, power inverters, and power converters. In these applications, the power MOSFET device is configured as an electronic switch, with the gate voltage controlling the on/off state of the switch.

The working principle of a MOSFET device is based on the various possible configurations of a semiconductor channel between two metal plates. When gate voltage is applied to the device, the semiconductor channel forms a conductive pathway between the source and the drain. The width of the channel is controlled by the gate voltage, which allows the device to be used to control the current flow between the source and the drain. By adjusting the gate voltage, the resistance of the semiconductor channel is modified, allowing the current flow to be precisely regulated.

The TK56E12N1,S1X is designed to operate at high frequencies in the range of 1 to 10 MHz and with very low input circuit power dissipation. It is suitable for use in high speed gate, buffer, and amplifier applications, as well as in power switching applications. The device also offers high switching speed and high current capabilities, as well as low on-state resistance. Its internal protection circuit provides electrical overstress protection, making this a highly reliable device. The device is also capable of operation at temperatures up to 125 degrees Celsius.

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