| Allicdata Part #: | TK60D08J1(Q)-ND |
| Manufacturer Part#: |
TK60D08J1(Q) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 75V 60A TO220W |
| More Detail: | N-Channel 75V 60A (Ta) 140W (Tc) Through Hole TO-2... |
| DataSheet: | TK60D08J1(Q) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.3V @ 1mA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220(W) |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 140W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5450pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 7.8 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The TK60D08J1(Q) is a single-channel enhancement mode metal-oxide-semiconductor field-effect transistor (MOSFET) designed to work with a wide range of power applications. It is rated 1200V and has a blocking voltage of 12kV. It is rated at a current of 8A RMS and provides excellent thermal performance due to its high thermal stability factor. The device is available in a TO-220-3 package and is suitable for use in isolated DC-DC converters.
A field-effect transistor is a semiconductor device which uses an electric field to control the movement of electrons through a channel. It is an unipolar device and conducts current in only one direction, allowing it to act as a switch to control electrical currents. MOSFETs are the most commonly used type of FET and are characterized by their low resistance when turned on, high input resistance, and very low leakage current. They are used in a wide range of applications, from switching power supplies to high-frequency radio circuits.
The TK60D08J1(Q) has a cutting-edge design which provides effective heat dissipation while maintaining excellent thermal stability. Its large vertical junction area results in a wide effective operation range enabling it to operate in a variety of conditions without sacrificing power capability. Furthermore, its high thermal stabiblity factor and high input resistance also help reduce power consumption, resulting in significant energy savings.
The TK60D08J1(Q) features three pins including an input pin, an output pin and a gate pin. The gate pin is used to control the flow of current and is responsible for switching the device on or off. The input pin is the voltage input terminal and the output pin is the output terminal. When the gate voltage is applied, the device will turn on and allow current to flow from the input pin to the output pin. When the gate voltage is removed, the device will turn off and the current will be cut off.
The TK60D08J1(Q) is specially designed to provide reliable operation in a wide range of power applications. It is suitable for use in a variety of applications, including telephone switching, remote control, automotive, power supply and motor drive systems. It is also suitable for use in low-voltage, high-capacity circuits, such as those used in switch mode power supplies and automation control circuits.
The TK60D08J1(Q) is a reliable and efficient device which is suitable for use in a wide range of power applications. It offers exceptional thermal performance and excellent power capability at a very competitive price. In addition, its gate pin is easy to drive, making it a great choice for use in large-scale and complex systems.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TK60D08J1(Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 75V 60A TO220... |
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TK60D08J1(Q) Datasheet/PDF