TK60E08K3,S1X(S Allicdata Electronics
Allicdata Part #:

TK60E08K3S1X(S-ND

Manufacturer Part#:

TK60E08K3,S1X(S

Price: $ 1.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 75V 60A TO-220AB
More Detail: N-Channel 75V 60A 128W Through Hole TO-220-3
DataSheet: TK60E08K3,S1X(S datasheetTK60E08K3,S1X(S Datasheet/PDF
Quantity: 1000
50 +: $ 1.27336
Stock 1000Can Ship Immediately
$ 1.41
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
FET Feature: --
Power Dissipation (Max): 128W
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Description

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Introduction

TK60E08K3,S1X is a type of Field Effect Transistor, shortened FET. It is a type of semiconductor device which works by using an electric field to control and regulate the flow of current in an electrical circuit. FETs consist of three distinct sections: the source, the drain, and the gate. The source and the drain form an electric field when a voltage is applied to them and the electric field controls the flow of current through the non-conductive channel between the source and the drain. The gate is positioned between the source and the drain and is used to control the flow and resistance of the electric field. FETs are used in a wide range of applications such as amplification of weak signals, switching and sensing of low currents, and protection of circuits against overvoltages.

Types of FETs

There are two main types of FETs: Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and JFETs. MOSFETs work by using a thin gate oxide layer which is sandwiched between two terminals that act as the source and the drain. A voltage applied to the gate can control and regulate the flow of current. JFETs work similarly to MOSFETs, however the gate is directly connected to the source and the electric field is generated by the effect of the current on the gate.

The TK60E08K3,S1X Model

The TK60E08K3,S1X model is a MOSFET which is specifically designed for use in a wide range of applications. It is a single-channel, low-voltage, low-threshold MOSFET which can be used in low-power applications such as cell phone, camera, and laptop power supplies. It has a maximum drain-source voltage of 18V, a continuous drain current of 600mA and a maximum gate turn-on/off time of 8ns. It is also capable of operating frequencies up to 3GHz, making it suitable for RF applications.

Advantages of the TK60E08K3,S1X Model

As mentioned, the TK60E08K3,S1X has a low voltage requirement and a low threshold which makes it suitable for low-voltage applications such as cell phones and laptop power supplies. It also has a relatively high current capacity and a fast operation time, making it an ideal choice for RF applications. Additionally, due to its Pb free and RoHS compliant construction, it is a cost-effective and environmentally friendly choice for many applications.

Conclusion

The TK60E08K3,S1X is a single-channel, low-voltage, low-threshold MOSFET which is designed for a wide range of applications. It has a low voltage requirement and a low threshold which make it suitable for low-voltage applications, as well as a high current capacity and a fast operation time, making it ideal for RF applications. Additionally, its Pb free and RoHS compliant construction makes it a cost-effective and eco-friendly choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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