Allicdata Part #: | TK7A55D(STA4QM)-ND |
Manufacturer Part#: |
TK7A55D(STA4,Q,M) |
Price: | $ 1.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 550V 7A TO-220SIS |
More Detail: | N-Channel 550V 7A (Ta) 35W (Tc) Through Hole TO-22... |
DataSheet: | TK7A55D(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 0.93517 |
Vgs(th) (Max) @ Id: | 4.4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 1.25 Ohm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 550V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK7A55D(STA4,Q,M) is classified as a single type MOSFET transistor. It is designed to use a single MOSFET in order to switch high current power while providing low power consumption and high switching speeds. The main features of this particular MOSFET are its low on-resistance, high breakdown voltage, small case size and fast switching times.
The TK7A55D(STA4,Q,M) transistors are typically used in power management applications such as switching high current loads, providing high speed switching, controlling current flow and power management. The transistors can also be used in audio applications such as amplifiers, filters and oscillators. The high on-resistance and fast switching times make the TK7A55D(STA4,QM) suitable for applications that require high bandwidths, such as in the automotive, telecommunications and industrial sectors.
The TK7A55D(STA4,Q,M) transistors are integrated circuit power switches with an enhancement-mode MOSFET. This device has a source-drain voltage of 30 V, a drain-source current of 5.0 A, and an on-resistance of 0.056 Ω. The device is housed in a TO-252 or SOT-563 package and is compatible with both TTL and CMOS layouts. It employs a P-channel field effect architecture for high current switching.
The working principle of the TK7A55D(STA4,Q,M) transistor is based on the MOSFET technology. This device consists of a dielectric layer along with a source and drain region. When a voltage is applied to the gate of the MOSFET, the current flow through the device is controlled. The higher the applied voltage, the more current that can flow through the device. This is due to the electric field effect that takes place between the gate and source-drain regions, which controls the opening and closing of the switch.
The TK7A55D(STA4,Q,M) transistors can also be used in switching applications such as electric motor controllers, DC/DC converters and power supplies. The device can handle high power loads while still providing a low power consumption rate and fast switching speeds. In addition to this, the device is also capable of providing extremely low on-resistance, making it suitable for high-power applications such as controlling large motors.
The TK7A55D(STA4,Q,M) transistors are typically used in high current applications such as power management and electric vehicles. The device is ideal for applications that require a high switching speed and low on-resistance. It is also capable of providing high levels of power efficiency and protection against short-circuit and lightning strikes. The device also provides high levels of isolation and noise suppression, making it suitable for use in high-precision applications.
The TK7A55D(STA4,Q,M) transistors are an ideal choice for applications that require high current switching, low on-resistance, fast switching speeds and high power efficiency. The device is also suitable for applications in electric motor controllers, DC/DC converters and power supplies. It provides an excellent level of protection against short-circuits and lightning strikes, as well as excellent noise suppression and isolation.
The specific data is subject to PDF, and the above content is for reference
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