| Allicdata Part #: | TK7A90ES4X-ND |
| Manufacturer Part#: |
TK7A90E,S4X |
| Price: | $ 1.36 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 900V TO220SIS |
| More Detail: | N-Channel 900V 7A (Ta) 45W (Tc) Through Hole TO-22... |
| DataSheet: |  TK7A90E,S4X Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.22850 |
| 50 +: | $ 0.98897 |
| 100 +: | $ 0.89006 |
| 500 +: | $ 0.69226 |
| 1000 +: | $ 0.57359 |
| Vgs(th) (Max) @ Id: | 4V @ 700µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220SIS |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 45W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
| Series: | π-MOSVIII |
| Rds On (Max) @ Id, Vgs: | 2 Ohm @ 3.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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TK7A90ES4X Application Field and Working Principle
The TK7A90ES4X is a very powerful semiconductor component that is widely used in the electronics field. It is a Field-Effect Transistor (FET) with a single sink and one source which give it unprecedented levels of power and flexibility. This device has been designed to be used in a variety of applications and its superior performance makes it an ideal choice for many different applications. Here, we shall discuss the particular application field and working principles of this semiconductor component.
Application Field
The application field of this FET is incredibly diverse. It has been found to be used successfully in a wide range of applications, such as:
- Power supplies
- Signal switching
- Motor drives
- Current/voltage regulators
- Audio amplifiers
- Radio frequency amplifiers
- Medical devices
- Instrumentation
- High-power amplifiers
As can be seen, the TK7A90ES4X’s application field is incredibly broad. This is due to the fact that it is a low-power yet highly efficient FET, which makes it suitable for a wide variety of tasks. Because of its high efficiency and low current requirements, it can easily be integrated into a variety of electronic circuits.
Working Principle
The working principle of the TK7A90ES4X is based on a source-coupled pair of transistors. A pair of transistors is connected such that one of them provides the source voltage while the other provides a current. The source voltage is applied across the base-emitter junction of the transistors and the current drawn. When a current is passed through the base-emitter junction, electrons are drawn across the junction, which causes a voltage drop across the device. This voltage drop is known as the drain voltage.
The source voltage is used to control the voltage across the device; when it is increased, the drain current is also increased, and vice versa. The drain current is used to provide power to the device, and also acts as an amplifier. This is how the TK7A90ES4X is able to provide the high performance it does.
Conclusion
The TK7A90ES4X is a powerful semiconductor that can be used in a wide variety of applications. Its low power requirements and high efficiency make it an ideal choice for many different tasks. Its application field is incredibly broad, and its working principle is based on the use of a source-coupled pair of transistors. In conclusion, the TK7A90ES4X is a highly efficient and versatile FET that has a wide range of possible applications.
The specific data is subject to PDF, and the above content is for reference
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