TK7P60W,RVQ Discrete Semiconductor Products |
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Allicdata Part #: | TK7P60WRVQTR-ND |
Manufacturer Part#: |
TK7P60W,RVQ |
Price: | $ 0.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N CH 600V 7A DPAK |
More Detail: | N-Channel 600V 7A (Ta) 60W (Tc) Surface Mount DPAK |
DataSheet: | TK7P60W,RVQ Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.61032 |
Vgs(th) (Max) @ Id: | 3.7V @ 350µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A Field-Effect Transistor (FET) is a type of transistor that utilizes the electric field to control the conduction of current between its terminals. The most common type of FET is the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). MOSFETs are widely used in a wide range of applications due to their high input impedance, low input current and cost efficiency. The MOSFET is a three-terminal device, consisting of a source terminal, a drain terminal, and a gate terminal. The TK7P60W,RVQ is an example of a single-gate MOSFET.
The working principle of the TK7P60W,RVQ is based on the gate-source voltage. When a positive gate-source voltage, VGS, is applied to the gate terminal, it modulates the electric field between the source and drain terminals. This modulation causes an increase in the carrier concentration near the gate, resulting in an increase in the conductivity of the channel between the source and drain terminals. The effect is known as the threshold voltage, and is the voltage at which the MOSFET starts to conduct.
In addition to a gate-source voltage, the TK7P60W,RVQ requires a drain-source voltage, VDS, in order to conduct. This voltage increases the carrier concentration near the drain, resulting in an increase in the conductance of the channel between the source and drain terminals. As the VDS increases, the conductance of the channel continues to increase until it reaches a saturation point, at which point it will remain constant regardless of any further increase in VDS.
The TK7P60W,RVQ is most commonly used in digital circuits for switching between high and low logic states. The MOSFET is an excellent choice for this type of application due to its high-speed switching capabilities and low power consumption. In addition, MOSFETs are widely used in power conversion and amplification circuits, as well as in radio-frequency (RF) applications.
The TK7P60W, RVQ is a relatively simple device to use, as it requires only a gate-source voltage and a drain-source voltage in order to operate. The MOSFET is also extremely cost-efficient due to its low input current and low cost of materials. As such, it is an extremely popular transistor for a variety of applications, and is used in many different types of circuits, from digital circuits to audio amplification circuits.
In conclusion, the TK7P60W, RVQ is a single-gate MOSFET that utilizes an electric field to control the conduction of current between its terminals. It is used in many different types of circuits, ranging from digital to audio amplification, and is popular for its high-speed switching capabilities and low power consumption. It requires only a gate-source voltage and a drain-source voltage in order to operate, making it an extremely cost-effective device.
The specific data is subject to PDF, and the above content is for reference
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