TK7P65W,RQ Discrete Semiconductor Products |
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Allicdata Part #: | TK7P65WRQTR-ND |
Manufacturer Part#: |
TK7P65W,RQ |
Price: | $ 0.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 650V 6.8A DPAK |
More Detail: | N-Channel 650V 6.8A (Ta) 60W (Tc) Surface Mount DP... |
DataSheet: | TK7P65W,RQ Datasheet/PDF |
Quantity: | 2000 |
2000 +: | $ 0.48382 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 3.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Ta) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TK7P65W,RQ is a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which falls into the category of single FETs (Field Effect Transistors). It is a fairly common MOSFET and can be used in a variety of applications. In this article, we will discuss the application field and working principle of the TK7P65W,RQ.
The TK7P65W,RQ is mainly used in applications where high-speed power MOSFET switching is required. This can include DC-DC converters, synchronous buck converters, current sensing applications, switching power supplies, inverters and motor control applications. The TK7P65W,RQ is also used in various types of industrial control systems such as current regulators and temperature controllers. This MOSFET can also be used in guitar amplifiers, audio amplifiers, and high-frequency audio amplifiers.
The TK7P65W,RQ is comprised of an integrated circuit gate, drain, and source. The gate is used to control the flow of electricity between the drain and source. When a positive voltage is applied to the gate, it attracts electrons and current flows between the drain and source. When the voltage applied to the gate is reversed, the electrons are pushed away and the current flow is blocked. This is known as the depletion mode.
The depletion mode is important since it is used to regulate the amount of current flowing through a circuit. This means that the TK7P65W,RQ can be used to control the power output of a system, allowing for a more efficient use of energy. Another advantage of the TK7P65W,RQ is its ability to be used in both low- and high-power applications. The ability to switch between the two operation modes make it a great choice for a variety of applications.
MOSFETs such as the TK7P65W,RQ can be easily integrated into a variety of circuit designs. This is because they are easy to control and possess low on-resistance, meaning they consume less power. The TK7P65W,RQ is also relatively small, making it easier to integrate into design without taking up too much space. Furthermore, the TK7P65W,RQ has a high maximum current rating and can handle a large amount of energy without overheating.
The TK7P65W,RQ is a versatile single FET that can be used in a wide range of applications. Its ability to switch between high- and low-power operations makes it useful for a variety of devices, and its small size allows for easier integration into a circuit design. Furthermore, its low on-resistance and high maximum current rating make it a great choice for power regulation and current control applications. The TK7P65W,RQ is an ideal choice for anyone looking for an efficient and reliable way to control and regulate power.
The specific data is subject to PDF, and the above content is for reference
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