| Allicdata Part #: | TK80S04K3L(T6L1NQ-ND |
| Manufacturer Part#: |
TK80S04K3L(T6L1,NQ |
| Price: | $ 0.68 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 40V 80A DPAK-3 |
| More Detail: | N-Channel 40V 80A (Ta) 100W (Tc) Surface Mount DPA... |
| DataSheet: |  TK80S04K3L(T6L1,NQ Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 0.61130 |
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK+ |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 100W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4340pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 87nC @ 10V |
| Series: | U-MOSIV |
| Rds On (Max) @ Id, Vgs: | 3.1 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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Introduction to TK80S04K3L(T6L1,NQ)The TK80S04K3L(T6L1,NQ) is a N-channel MOSFET which is especially designed for portable, low cost and medium power applications.
It has an operating temperature range of -55°C to +150°C and is packaged in a SO-8 package. It is also ESD compliant and can handle up to 30KV of electrostatic discharge. It is available in various voltage ratings such as 40V, 60V and 100V.
Applications and Working Principle of TK80S04K3L(T6L1,NQ)
The TK80S04K3L(T6L1,NQ) can be used in a wide range of applications, some of which include portable applications such as laptops and mobile phones, low power audio and lighting systems, as well as automotive applications. Its low cost and small size makes it ideal for these applications.
The TK80S04K3L(T6L1,NQ) operates by utilizing a MOSFET structure, which consists of three terminals which are the source, drain and gate. When a positive voltage is applied to the gate, electrons are attracted towards the gate and the source-drain current’s voltage increases. This creates a channel which allows current to flow through and eventually turn on the transistor.
The TK80S04K3L(T6L1,NQ) has a low “on” resistance rating, meaning it can carry high current levels with minimal voltage drop. This makes it ideal for use in applications where power efficiency is important. It also has a high switching speed, making it suitable for use in high frequency applications. The high “off” resistance of the TK80S04K3L(T6L1,NQ) makes it ideal for use in applications where current needs to be switched off quickly and efficiently.
The TK80S04K3L(T6L1,NQ) can also be used as part of larger circuits such as half and full bridge rectifiers. In these circuits, it can be used to switch the current flow in an alternating direction, helping to provide more power in the output stage.
Overall, the TK80S04K3L(T6L1,NQ) is an ideal choice for low cost, medium power applications such as laptops, mobile phones, and lighting, automotive and audio systems. Its wide operating temperature range and low on resistance make it suitable for high-efficiency applications, and its high switching speed makes it suitable for use in high frequency circuits.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TK80S04K3L(T6L1,NQ | Toshiba Semi... | 0.68 $ | 1000 | MOSFET N-CH 40V 80A DPAK-... |
| TK80S06K3L(T6L1,NQ | Toshiba Semi... | 0.68 $ | 1000 | MOSFET N-CH 60V 80A DPAK-... |
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