Allicdata Part #: | TK80S06K3L(T6L1NQ-ND |
Manufacturer Part#: |
TK80S06K3L(T6L1,NQ |
Price: | $ 0.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 60V 80A DPAK-3 |
More Detail: | N-Channel 60V 80A (Ta) 100W (Tc) Surface Mount DPA... |
DataSheet: | TK80S06K3L(T6L1,NQ Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.61130 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK+ |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 10V |
Series: | U-MOSIV |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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。The TK80S06K3L (T6L1,NQ) is a single-channel field-effect transistor (FET), specifically a MOSFET. Its applications span a number of sectors, primarily power electronics, where it provides reliable and consistent SWithching performance. The TK80S06K3L also can function as a DC-DC converter and is equipped with an isolation voltage of 1500Volt/min and a maximum drain current of 25A. Additionally, it has a drain-source breakdown voltage of 700Volt.
The theoretical and practical working principle of a MOSFET is aptly named after its inventor, Julius Edgar Lilienfeld. In the simplest terms, the transfer of electricity between two electrodes (terminals or ‘gates’) is facilitated via an electrical field. The ability of electrons to pass between the two electrodes is dependent upon the strength of the electric field, with a strong enough electric field needed to ensure an adequate electrical current is transmitted across the MOSFET. This is achieved by creating a potential difference between the two electrodes.
The core of the TK80S06K3L is a monolithic silicon chip attached to the substrate below. The MOSFET consists of a source (S) and a drain (D), with an electrical gate (G) in between. Applying a potential difference between the gate and the source activates the MOSFET and creates an electric field around the source and drain. The electrons in the source and drain then become mobile and are attracted to the gate, which acts as a field of electrons. As long as the voltage between the source and gate is greater than the ‘threshold voltage’, the electric field between the source and drain will remain intact, thus allowing current to flow between them.
The TK80S06K3L has numerous features that make it a highly reliable device. With a maximum drain current of 25A, it can easily handle the load signals that a typical power circuit or DC-DC converter may require. The isolation voltage of 1500Volt/min ensures that the device remains safe and protected from outside electrical interference. It also includes a drain-source breakdown voltage of 700Volt and an additional voltage tolerance level of up to ±10%, making it highly efficient and durable.
The TK80S06K3L is an extremely effective and reliable device suitable for use in a wide range of applications. Its properties and features make it especially convenient when it comes to power electronics and DC-DC converters, both of which require reliable and consistent SWithching performance. Furthermore, its electrical and thermal characteristics mean that it is able to resist any electrical interference or temperature shifts.
The specific data is subject to PDF, and the above content is for reference
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