TK9A45D(STA4,Q,M) Allicdata Electronics
Allicdata Part #:

TK9A45D(STA4QM)-ND

Manufacturer Part#:

TK9A45D(STA4,Q,M)

Price: $ 1.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 450V 9A TO-220SIS
More Detail: N-Channel 450V 9A (Ta) 40W (Tc) Through Hole TO-22...
DataSheet: TK9A45D(STA4,Q,M) datasheetTK9A45D(STA4,Q,M) Datasheet/PDF
Quantity: 1000
50 +: $ 1.00208
Stock 1000Can Ship Immediately
$ 1.11
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Series: π-MOSVII
Rds On (Max) @ Id, Vgs: 770 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 450V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TK9A45D (STA4,Q,M) is a type of field effect transistor (FET) that functions by controlling the electrical conductivity of an underlying semiconductor material. This type of transistor is commonly used in applications such as power management, logic circuits, and speed control. The following article will discuss the application field and working principle of the TK9A45D.The TK9A45D is a MOSFET (metal oxide semiconductor field effect transistor) designed to operate at a maximum voltage of 45V and a maximum drain current of 9A. As such, it is often used in applications requiring high power switching and control such as motor speed controllers, solid state relays, and DC-DC converters. It can also be used in more general applications such as switching LED circuits and digital logic circuits.The working principle of the TK9A45D is based on the behavior of charge carriers in a semiconductor. The transistor consists of five terminals; source, gate, drain, drain, and body. The source and drain regions are connected to the underlying semiconductor material, while the third “gate” terminal is connected to a voltage source or input signal.When a suitable voltage is applied to the gate terminal, it creates an electric field across the semiconductor material. This produces a “channel” between the source and drain terminals, which can be manipulated in size, allowing for the control of current flow. In the case of the TK9A45D, the size of the channel can be controlled by varying the gate voltage level, thus allowing for precise control of current and power switching applications.In addition to its common applications, the TK9A45D can also be used as a signal amplifier. In this application, the transistor is used to amplify an input signal. The signal is applied to the gate, creating a varying electric field across the semiconductor material which, in turn, controls the size of the channel between the source and drain. This allows for precise amplification of the signal.In conclusion, the TK9A45D (STA4,Q,M) is a field effect transistor designed to operate at a maximum voltage of 45V and a maximum drain current of 9A. It is commonly used in applications requiring high power switching and control such as motor speed controllers, solid state relays, and DC-DC converters. Additionally, the MOSFET can be used as a signal amplifier to amplify an input signal.

The specific data is subject to PDF, and the above content is for reference

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