| Allicdata Part #: | TK9A55DA(STA4QM)-ND |
| Manufacturer Part#: |
TK9A55DA(STA4,Q,M) |
| Price: | $ 1.31 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 550V 8.5A TO-220SIS |
| More Detail: | N-Channel 550V 8.5A (Ta) 40W (Tc) Through Hole TO-... |
| DataSheet: |  TK9A55DA(STA4,Q,M) Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 1.18100 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220SIS |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 40W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1050pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Series: | π-MOSVII |
| Rds On (Max) @ Id, Vgs: | 860 mOhm @ 4.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.5A (Ta) |
| Drain to Source Voltage (Vdss): | 550V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The TK9A55DA is a Single P-Channel Enhancement Mode Field-Effect Transistor (P-FET). This device is designed for use in low voltage MOSFETs, and is one of the most popular P-FETs in the market. The device has a very high input impedance, a relatively low gate-drain capacitance, and a fast switching speed. It\'s also very easy to use, with its simple three-pin design, and large Rdson area. In addition, this device is extremely reliable and is designed for long-term operation in a wide range of applications.
The TK9A55DA is mainly used in applications such as motor control and drive, power management, digital logic, and local area networks. It is also ideal for any application where high switching speed, low on-resistance and voltage, and low power consumption are all essential. The TK9A55DA has three package types, including the surface-mount (STA4), quad flat pack (QFP), and multi-gate package (MP).
The working principle of the TK9A55DA is quite simple. When the drain voltage is higher than the gate voltage, then the channel between the source and drain will be turned on. This channel allows a current to flow, dependent on the drain voltage. The drain current is proportional to the gate voltage due to the nature of the P-FET. The main advantage of the TK9A55DA is its low on-resistance and high switching speed. This allows for both low power consumption and a fast response time. It also enables the user to take advantage of the device\'s low cost and ease-of-use.
The TK9A55DA is designed to be used in applications that require a high degree of reliability, as it can operate in harsh environments. It is also designed to be used in applications where a high degree of accuracy is required. The device is also able to work over a wide temperature range, making it an ideal choice for industrial and commercial applications.
The TK9A55DA is one of the most popular P-FETs on the market, providing an excellent combination of performance and power efficiency. Its wide range of uses, excellent switching speed, and low on-resistance make it a great choice for a wide range of applications. Its low power requirement and ease-of-use make it a great choice for applications where power efficiency is important. It also provides excellent reliability in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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