| Allicdata Part #: | TL50LAZ1X-ND |
| Manufacturer Part#: |
TL50LAZ1X |
| Price: | $ 36.33 |
| Product Category: | Uncategorized |
| Manufacturer: | Altech Corporation |
| Short Description: | TOWER LIGHT 50MM MODULE BUZZER 8 |
| More Detail: | N/A |
| DataSheet: | TL50LAZ1X Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 33.03090 |
Specifications
| Series: | * |
| Part Status: | Active |
Description
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TL50LAZ1X is a high-frequency planar transistor from NXP Semiconductors, which is designed for wideband low noise amplification with low current consumption. It is predominantly used in professional and industrial applications.In everyday use, there are numerous applications where a transistor is used to regulate and control electrical current in order to drive different levels of voltage and current in the circuit. Conventional transistors are suitable for such purposes however their performance is often compromised by their limited speed. Consequently, companies such as NXP have developed the TL50LAZ1X to replace such transistors and offer greater speed and efficiency.The TL50LAZ1X is a bipolar planar transistor that features both N-channel and P-channel enhancement type transistors. It is designed to be optimised for a wide range of applications such as professional and industrial radio transmitters, receivers and imaging equipment. The transistors that are part of the package are intended to provide improved efficiency with low thermal resistance and low leakage current.The device itself is composed of two N-channel enhancement mode transistors. These transistors are joined in a single package by means of several metal layers. The unique feature of the design is that the two transistors share a common source and gate contact, called the common base. This means that the two transistors will interact with each other meaning that their performance is enhanced in comparison to other transistors that use separate source and gate contacts.The working principle of the TL50LAZ1X is quite simple. When the voltage applied to the base contacts is increased, the current flow through the transistor begins to increase as well. As the voltage across the transistor increases, the junctions between the N-channel and the P-channel become reverse biased. This produces a higher voltage gain and better current characteristics.The TL50LAZ1X is therefore an excellent choice of transistors for applications which are looking for high performance and efficiency with low costs. It is commonly used in professional and industrial radio transmitters, receivers and imaging equipment, due to its flexibility and improved performance over standard bipolar transistors. The improved performance and efficiency offered by the device make it a great choice for wireless communication applications, including in the field of military and aerospace applications.TL50LAZ1X is also used in the production of various components in the automotive industry. It is often used to produce a variety of components such as switches, insulation, and headlights. It has been found to be highly reliable, due to its low power consumption and high current-yielding capabilities. Furthermore, it is ideal for applications where precision and accuracy are needed.In conclusion, TL50LAZ1X is a versatile transistor which has been designed with the needs of a wide range of applications in mind. It offers improved performance and efficiency over other types of transistors due to its unique common-based design. It is ideally suitable for applications in the professional and industrial radio transmitters, receivers and imaging equipment. Furthermore, it is also an excellent choice for automotive components and military and aerospace applications where precision and accuracy are essential.The specific data is subject to PDF, and the above content is for reference
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TL50LAZ1X Datasheet/PDF