Allicdata Part #: | TLC530TU-ND |
Manufacturer Part#: |
TLC530TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 330V 7A TO-220 |
More Detail: | N-Channel 330V 7A (Ta) Through Hole TO-220-3 |
DataSheet: | TLC530TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 330V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TLC530TU N-Channel MOSFET is a high-efficiency single device with a wide range of application fields. It is especially well-suited for analog and digital switching, providing low power consumption and high voltage capability. This article will discuss the working principle and application fields of the TLC530TU.
Application Fields
The TLC530TU is an ideal choice for various applications requiring low-power N-Channel MOSFETs. It can be used to switch and control current, as well as to amplify signals. The device is suitable for applications such as audio amplifiers, audio receivers and processing systems. Additionally, it can be used in the power supply of LCD displays, LED drivers and various DC/AC power conversion systems. In these applications, it provides reliable performance and efficient energy management.
Working Principle
The TLC530TU is a high-efficiency single device. It consists of an insulated gate which determines the resistance at the channel. When a positive voltage is applied to the gate, the conductivity of the channel is increased and current flows more readily. When a negative voltage is applied to the gate, the channel resistance increases and current conduction is reduced. This MOSFET can handle a maximum current of 30 Watts and has a drain-source breakdown voltage of 600 Volts.In addition, the device has an accurate voltage window for gate voltage. If the maximum voltage is applied, it will turn on and control the current in the channel. It also has a low leakage current, making it suitable for both high frequency and low frequency applications.
Conclusion
The TLC530TU N-Channel MOSFET is well-suited for a wide range of application fields from audio amplifiers to LCD displays. It provides low power consumption and high voltage capability in a reliable and efficient manner. Additionally, the device has an accurate gate voltage window for gate voltage and a low leakage current. In conclusion, the TLC530TU N-Channel MOSFET is an ideal choice for various applications that require reliable and efficient energy management.
The specific data is subject to PDF, and the above content is for reference
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