Allicdata Part #: | TLZ11B-GS18-ND |
Manufacturer Part#: |
TLZ11B-GS18 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 11V 500MW SOD80 |
More Detail: | Zener Diode 11V 500mW Surface Mount SOD-80 MiniME... |
DataSheet: | TLZ11B-GS18 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01743 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 11V |
Tolerance: | -- |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 10 Ohms |
Current - Reverse Leakage @ Vr: | 40nA @ 9.98V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | SOD-80 MiniMELF |
Description
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Introduction
TLZ11B-GS18 diode is a single diodes series offered by Diodes Incorporated. It is designed to provide peak current capabilities for a variety of applications that require constant, repeatable performance. The series is suitable for both low voltage DC and high frequency AC applications. It is also designed for harsh industrial environments requiring reliability, durability, as well as superior power ratings and superior power dissipation.Application fields
TLZ11B-GS18 diode has a wide range of applications in the industrial and communications industries. It technology is suitable for a variety of circuit protection schemes such as Zener overvoltage protection, clamping, EMI/RFI filtering, voltage level conversion, and rectification. It is ideal for applications in regulated power and smart remotes, power inverters, power converters, electric vehicle inverters, industrial motors and lighting control systems, smart digital radios, and high-power video systems.Working Principle
The TLZ11B-GS18 diode is a single diode device that consists of PN junction of lightly doped “N” region and heavily doped “P” region. The junction is formed by diffusing a highly doped “P” region into a lightly doped “N” region. A voltage is applied across the two regions, when the voltage across the junction reaches the characteristic voltage, current flows through the device. The TLZ11B-GS18 series has the ability to provide a balanced current, ensuring a consistent current rating across a wide range of operating conditions. The TLZ11B-GS18 diode utilizes Zener impedance and reverse breakdown voltage characteristics to provide excellent watt density and power handling performance. With Zener impedance and reverse breakdown voltage characteristics, the diode is ideal for a wide range of rectification, voltage level conversion, and EMI/RFI filtering applications. It is also suitable for circuits where controlling the current flow is important, such as voltage regulation and power inverters.Conclusion
TLZ11B-GS18 diode from Diodes Incorporated is a versatile single-diode device with excellent performance for a variety of low voltage and high frequency applications. It utilizes Zener impedance and reverse breakdown voltage characteristics to provide excellent watt density and power handling performance. It is ideal for applications in regulated power, smart remotes, power converters, electric vehicle inverters, industrial motors and lighting control systems, smart digital radios, and high-power video systems.The specific data is subject to PDF, and the above content is for reference
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