TLZ13-GS08

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Introduction

The TLZ13-GS08 is a silicon planar zener diode designed and developed to provide improved power dissipation and low reverse leakage current in a variety of applications. The series consists of 8 SMD parts in the standard package, with a breakdown voltage ranging from 5.6V to 11.2V. The device delivers superior performance in a miniature SMD package, making it an ideal solution for telecommunication and computing applications.

Application Field

The TLZ13-GS08 series of Zener diodes are ideally suited for a variety of applications, including signal conditioning, overvoltage protection, and voltage regulation. The device is specially designed for circuits operating in harsh environmental conditions, such as those found in industrial equipment, consumer audio/video equipment, and communication devices. It is also suitable for battery operated equipment and portable systems.

Working Principle

The TLZ13-GS08 is essentially a PN junction diode that is designed to operate in reverse bias mode. When the voltage applied to the diode exceeds its breakdown voltage (Vz), it is said to be in Zener region. In this region, the diode will allow current to flow through it, and it will remain in a reverse bias condition. This process is known as Zener breakdown. When the reverse bias voltage of the diode is increased, the Zener breakdown current also increases.

When the TLZ13-GS08 diode is connected in reverse bias mode, the junction acts as a back-to-front barrier. When the forward bias voltage exceeds the breakdown voltage, the diode is said to be in avalanche region. In this region, the junction allows higher current flow and a large voltage drop across the device.

The TLZ13-GS08 Zener diode has a wide range of operating temperature and is therefore suitable for use in a variety of applications. The device features low power dissipation and low reverse leakage current, which make it an ideal choice for use in a variety of applications. The device is also designed to provide superior power dissipation and low reverse leakage current while operating in harsh environmental conditions.

Conclusion

The TLZ13-GS08 Zener diode is specifically designed to provide superior power dissipation, low reverse leakage current, and a wide range of operating temperatures in a variety of applications. The device can be used to conduct signal conditioning, overvoltage protection, and voltage regulation, and is suitable for use in battery operated equipment and portable systems. The device is also designed to operate in a wide range of environmental conditions, making it an ideal choice for industrial equipment, consumer audio/video equipment, and communication devices.

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