TN0200K-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | TN0200K-T1-E3CT-ND |
Manufacturer Part#: |
TN0200K-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V SOT23-3 |
More Detail: | N-Channel 20V 350mW (Ta) Surface Mount SOT-23-3 (... |
DataSheet: | TN0200K-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 50µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 350mW (Ta) |
FET Feature: | -- |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 2nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 600mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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TN0200K-T1-E3 Application Field and Working Principle
TN0200K-T1-E3 is one of the most efficient and cost effective field effect transistors (FETs), the most popular type of transistor in the market. It is a single MOSFET with improved quality and better range of current. TN0200K-T1-E3 has wide application in many electronics fields, and it also has a distinct working principle. This article will discuss both the application field ofTN0200K-T1-E3 and its working principle in details.
Application Field of TN0200K-T1-E3
TN0200K-T1-E3 FETs are mostly used in audio equipment and amplifiers, as they can reduce power loss and improve sound quality. They are also widely used in cellphones, tablets, and other electronic devices, as they can help to reduce energy consumption and increase battery life. TN0200K-T1-E3 FETs can be also used in various automotive, industrial, and medical applications, as they are extremely reliable.
TN0200K-T1-E3 FETs are also used in different communication systems, such as Wifi, Bluetooth, and GSM. These FETs can reduce interferences, improve range, and maximize the efficiency of the systems. They are also used in robotics and automation, as they can make systems more accurate and efficient.
Working Principle of TN0200K-T1-E3
TN0200K-T1-E3 is a single MOSFET transistor. It has a single drain, gate and source. The single MOSFET transistor is a voltage-controlled device that operates in three modes: accumulation, depletion, and inversion. In accumulation mode, the gate is positively biased and the source and drain are connected through a resistance.
In the depletion mode, the gate voltage is negative and the source and drain are connected through a resistance. In the inversion mode, the gate is at a negative voltage and the source and drain are connected through a negative resistance. In this mode, the drain current increases as the gate voltage increases. The TN0200K-T1-E3 transistor is designed to switch rapidly and provide excellent performance.
The TN0200K-T1-E3 transistor is designed to operate at low drain-source voltage and current so that it can be used in low voltage and low power applications. This makes it ideal for battery-operated devices such as remote controls, cellphones, and laptops. It is also designed for easy integration into existing circuits and systems. The TN0200K-T1-E3 is highly reliable and has a long life.
Conclusion
TN0200K-T1-E3 is an efficient and cost effective FET. It is used in a wide range of electronics applications. It has a simple working principle and can be easily integrated into existing circuits. It is ideal for low power and low voltage applications and can provide excellent performance and reliability. As such, it is an excellent choice for many electronic applications.
The specific data is subject to PDF, and the above content is for reference
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