TN0201K-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | TN0201K-T1-E3TR-ND |
Manufacturer Part#: |
TN0201K-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 420MA SOT23-3 |
More Detail: | N-Channel 20V 420mA (Ta) 350mW (Ta) Surface Mount ... |
DataSheet: | TN0201K-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 350mW (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 300mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 420mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TN0201K-T1-E3 is a field-effect transistor (FET), specifically a metal-oxide-semiconductor FET (MOSFET). It belongs to the category of single-gate FETs and is one of the most commonly used components in electronic applications.
MOSFETs are solid-state switches that can manipulate electrical signals with the application of varying voltages. The MOSFET abbreviates to metal-oxide-semiconductor field-effect transistor, which has a metal gate and oxide insulation layer between the gate and the semiconductor substrate. This is the layer that is responsible for controlling the current flow in the transistor. The TN0201K-T1-E3 is a single-gate FET, meaning it has only one controlling gate.
The TN0201K-T1-E3 has three pins, Drain, Gate and Source. In a normal operating state, the drain and source pins are connected together. An input voltage is applied to the gate, which then activates the transistor. When the gate voltage is applied, it creates an electric field that modulates the conductivity of the transistor. This changes the resistance of the semiconductor layer, allowing the current to flow between the drain and source pins.
The TN0201K-T1-E3 MOSFET is typically used in low voltage and low power electronic applications. It is often used as a switch to power on and off circuits, such as DC motors, solenoids and relays. It is also used as a driver in circuits that require amplifying power or current. Other common applications include switching signals and amplifying or controlling low-level audio signals.
MOSFETs are sometimes preferred over other types of transistors due to their low input capacitance and low resistance. This means they consume less power and can amplify or switch signals with greater efficiency. The other advantage of MOSFETs is their smaller size, making them a popular choice in space-restricted projects.
Due to its favorable features, the TN0201K-T1-E3 MOSFET is ideal for applications such as low-level amplification, switching, low-frequency power control, and DC motor driver. Its low input capacitance and low resistance enable it to provide higher levels of efficiency in these applications. This makes it perfect for projects that require high levels of accuracy or efficiency.
The specific data is subject to PDF, and the above content is for reference
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