TN2640K4-G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 2mA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252, (D-Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	225pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	500mA (Tj)
Drain to Source Voltage (Vdss):	400V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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TN2640K4-G is a single MOSFET, which is manufactured by Toshiba. It is mainly used in power supply and motor control applications, and is especially suitable for switch mode power supply and motor drive applications. This article will introduce the application field and working principle of TN2640K4-G.TN2640K4-G is a single MOSFET device with a gate oxide thickness of 5.2nm, an N-channel MOS transistor with a drain current of 25A and a rating voltage of 30V, and is suitable for 1.2V to 3.6V gate sources. The average gate charge of the device is 23.3nC. This product also has an avalanche energy rating of 100mJ, making it suitable for high-speed switching applications. TN2640K4-G is mainly used in switch mode power supplies and motor control applications. The device can be used to control the output power of a power supply, regulate the output voltage, or switch motor speed in motor control applications. TN2640K4-G also has a better layout flexibility and thermal performance than other MOSFET devices, which can significantly reduce the size and cost of the power supply while improving the reliability of the system.In terms of working principle, TN2640K4-G is an N-channel MOSFET which is controlled by a gate. It has three terminals: source, drain and gate. When a voltage is applied to the gate, the current flows between the source and drain terminals. The MOSFET acts like a voltage-controlled switch, which enables efficient switching of the current between the two terminals.The MOSFET is capable of handling high frequencies, such as those found in switch mode power supplies, which makes it suitable for applications requiring high-speed switching. Additionally, MOSFETs have a much lower gate voltage compared to other types of transistors, thus significantly reducing power consumption and improving the efficiency of power supplies.To summarize, TN2640K4-G is a single MOSFET device with good thermal performance and high frequency switching capabilities. It is mainly used in switch mode power supplies and motor control applications, and has a gate oxide thickness of 5.2nm, a drain current of 25A and a rating voltage of 30V. The device works by controlling the current flow between the source and drain terminals using the gate voltage, making it a more efficient and cost-effective solution than other types of transistors.

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