TN2640N3-G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TN2640N3-G is one of the highest performance power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) available on the market today. This MOSFET is highly reliable, has low drain and source on-state resistance (RDS) and low gate-to-body leakage. It is suitable for RF and switching application that demand superior performance and high reliabilty.

The TN2640N3-G is a N-channel MOSFET device with high breakdown voltage, low gate charge, low gate-source capacitance, and low on-resistance. This MOSFET is fabricated using the state-of-the-art junction process to offer superior performance, reliability, and superior thermal characteristics. The drain-source voltage (V DS ) is 50 V and the gate-source voltage (V GS ) is 20 V. It has a 1.1 µm of gate oxide thickness. This device has a junction-to-case thermal resistance that is lower than conventional power MOSFETs.

TN2640N3-G is commonly used in applications that require a high voltage MOSFET with low on-state resistance. The TN2640N3-G can be used in many different applications such as motor control, switching regulators, high-frequency amplifier circuits, dc-dc converter circuits, power supplies, and power factor correction circuits. This MOSFET can also be used in circuits that are exposed to high temperature, since the device has good thermal properties.

The working principle for the TN2640N3-G is based on the fact that MOSFETs are voltage-controlled devices. When a voltage is applied to the gate of the MOSFET, a channel is created between the drain and the source. This channel provides a path for current to flow from the drain to the source. The current flow through the channel is controlled by the magnitude of the voltage applied to the gate. As the voltage applied to the gate increases, the channel gets wider, allowing more current to flow through it. This increases the overall efficiency of the circuit.

The thermal properties of the TN2640N3-G are also very good. This helps to ensure that the device does not overheat when used for high-power applications. The unique design of the device also helps to ensure that it is able to handle voltage spikes without any damage.

In summary, the TN2640N3-G is a high performance power MOSFET that is suitable for a wide range of applications. Its low drain and source on-state resistance (RDS), low gate charge, low gate-source capacitance, and low on-resistance make it suitable for use in RF and switching applications. The device also has good thermal properties and can handle voltage spikes without any damage.

The specific data is subject to PDF, and the above content is for reference