Allicdata Part #: | TP2640LG-G-ND |
Manufacturer Part#: |
TP2640LG-G |
Price: | $ 1.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET P-CH 400V 0.086A 8SOIC |
More Detail: | P-Channel 400V 86mA (Tj) 740mW (Ta) Surface Mount ... |
DataSheet: | TP2640LG-G Datasheet/PDF |
Quantity: | 1000 |
3300 +: | $ 0.90846 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 740mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 15 Ohm @ 300mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 86mA (Tj) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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TP2640LG-G is a power MOSFET transistor with a variety of applications in the field of electrical engineering. It is a single N-channel MOSFET that is designed for use in power conversion, motor control and silent switching. The TP2640LG-G is an optimal choice for high current switching, providing high power and excellent reliability at a relatively low cost.
The structure of the TP2640LG-G is a single-gate depletion MOSFET. It is fabricated on a DMOS (Double Diffused MOSFET) process technology using optimized mask design, high-quality polysilicon and advanced epitaxial wafer processing. The device has a separate source, drain and gate regions that are isolated from the substrate. This structure provides the well-known advantages of DMOS such as low ON-resistance, high DC current gain and excellent drain-source breakdown voltage.
The TP2640LG-G has a built-in body diode which is essential for use in full-wave rectification circuits. The device can also act as an efficient switch in a reactive load circuit, eliminating unnecessary losses due to the Body Diode conduction. As a result, it is suitable for frequent switching, and soft switching applications.
The working principle of the TP2640LG-G is based on controlling the flow of current through the drain-source channel of the device. In the on-state, a positive voltage is applied to the gate which attracts the electrons in the N-channel. This reduces the number of electrons in the channel and allows current to flow from source to drain. In the off-state, no voltage is applied to the gate and the channel has maximum electrons, resulting in no current flowing through the drain-source channel, thus ensuring zero gate leakage.
The high input impedance characteristics, low parasitic capacitances and low on-state resistance of the device make it suitable for power control, motor control and frequency convertors. The low turn-on and turn-off times of the device also make it suitable for high-frequency power conversion applications. The wide drain-source voltage also ensures that it can operate across a wide range of voltages, making it suitable for a variety of applications.
In summary, the TP2640LG-G is a single N-channel power MOSFET with excellent characteristics for power control, motor control and frequency convertors. Its low on-state resistance, built-in body diode and wide operating voltage range make it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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