TP2640LG-G Allicdata Electronics
Allicdata Part #:

TP2640LG-G-ND

Manufacturer Part#:

TP2640LG-G

Price: $ 1.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET P-CH 400V 0.086A 8SOIC
More Detail: P-Channel 400V 86mA (Tj) 740mW (Ta) Surface Mount ...
DataSheet: TP2640LG-G datasheetTP2640LG-G Datasheet/PDF
Quantity: 1000
3300 +: $ 0.90846
Stock 1000Can Ship Immediately
$ 1.01
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 740mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 15 Ohm @ 300mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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TP2640LG-G is a power MOSFET transistor with a variety of applications in the field of electrical engineering. It is a single N-channel MOSFET that is designed for use in power conversion, motor control and silent switching. The TP2640LG-G is an optimal choice for high current switching, providing high power and excellent reliability at a relatively low cost.

The structure of the TP2640LG-G is a single-gate depletion MOSFET. It is fabricated on a DMOS (Double Diffused MOSFET) process technology using optimized mask design, high-quality polysilicon and advanced epitaxial wafer processing. The device has a separate source, drain and gate regions that are isolated from the substrate. This structure provides the well-known advantages of DMOS such as low ON-resistance, high DC current gain and excellent drain-source breakdown voltage.

The TP2640LG-G has a built-in body diode which is essential for use in full-wave rectification circuits. The device can also act as an efficient switch in a reactive load circuit, eliminating unnecessary losses due to the Body Diode conduction. As a result, it is suitable for frequent switching, and soft switching applications.

The working principle of the TP2640LG-G is based on controlling the flow of current through the drain-source channel of the device. In the on-state, a positive voltage is applied to the gate which attracts the electrons in the N-channel. This reduces the number of electrons in the channel and allows current to flow from source to drain. In the off-state, no voltage is applied to the gate and the channel has maximum electrons, resulting in no current flowing through the drain-source channel, thus ensuring zero gate leakage.

The high input impedance characteristics, low parasitic capacitances and low on-state resistance of the device make it suitable for power control, motor control and frequency convertors. The low turn-on and turn-off times of the device also make it suitable for high-frequency power conversion applications. The wide drain-source voltage also ensures that it can operate across a wide range of voltages, making it suitable for a variety of applications.

In summary, the TP2640LG-G is a single N-channel power MOSFET with excellent characteristics for power control, motor control and frequency convertors. Its low on-state resistance, built-in body diode and wide operating voltage range make it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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