Allicdata Part #: | TP2640N3-G-ND |
Manufacturer Part#: |
TP2640N3-G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET P-CH 400V 0.18A TO92-3 |
More Detail: | P-Channel 400V 180mA (Tj) 1W (Ta) Through Hole TO-... |
DataSheet: | TP2640N3-G Datasheet/PDF |
Quantity: | 932 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 15 Ohm @ 300mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 180mA (Tj) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The TP2640N3-G is a modern field effect transistor (FET) designed to provide high-performance power regulation for a wide range of applications. In this article, we’ll explore the major application fields for the TP2640N3-G and discuss the basic working principles which make this device suitable for those applications.
The primary application for the TP2640N3-G is power switching and regulation. Although this device is designed to be a low-power FET, it provides excellent control of currents and voltages when used in applications that require higher power switching. In particular, the device is favored by those involved in controlling high-power switching, such as motor control, variable frequency drives, and power supplies. Its fast switching speed and low power consumption make it an ideal choice for applications that require precise control over the current and voltage.
In terms of its working principles, the TP2640N3-G utilizes the same physics as any other FET. In particular, it can be used to control the voltage and current of a circuit using the three “pins” of the FET, which are the source, drain, and gate. The source and drain act as the positive and negative terminals of the FET, while the gate acts as a switch through which current and voltage can be applied. By changing the voltage on the gate pin, the current and voltage across the source-drain pair can be adjusted, allowing the user to control power usage and regulation.
The TP2640N3-G also has a few added features which make it even more suitable for its primary application. Most notably, it features an on-resistance lower than the 2 mOhm typically found on other similarly sized FETs. This low on-resistance reduces power losses and increases efficiency in circuits which require high switching speeds. Additionally, the device is designed to be very efficient in terms of power consumption, as its quiescent power consumption is only 9.7 mA. This makes it suitable for use in battery-operated applications, as it won’t drain the battery as quickly compared to other FETs.
The TP2640N3-G is an excellent power regulation device, capable of providing high-precision control over current and voltage in high-power switching applications. Its low on-resistance and low power consumption make it ideal for use in motor control, variable frequency drives, and power supplies, where precise control and efficiency are paramount.
The specific data is subject to PDF, and the above content is for reference
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