| Allicdata Part #: | TP65H035WS-ND |
| Manufacturer Part#: |
TP65H035WS |
| Price: | $ 16.84 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Transphorm |
| Short Description: | 650 V 46.5 CASCODE GAN FET |
| More Detail: | N-Channel 650V 46.5A (Tc) 156W (Tc) Through Hole T... |
| DataSheet: |  TP65H035WS Datasheet/PDF |
| Quantity: | 127 |
| 1 +: | $ 15.30270 |
| 10 +: | $ 13.91040 |
| 30 +: | $ 12.86710 |
| 120 +: | $ 11.82380 |
| 270 +: | $ 10.78060 |
| Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 8V |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 156W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 400V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Vgs(th) (Max) @ Id: | 4.8V @ 700µA |
| Rds On (Max) @ Id, Vgs: | 41 mOhm @ 30A, 8V |
| Drive Voltage (Max Rds On, Min Rds On): | 8V |
| Current - Continuous Drain (Id) @ 25°C: | 46.5A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | GaNFET (Gallium Nitride) |
| FET Type: | N-Channel |
| Part Status: | Active |
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The TP65H035WS is a P-Channel enhancement mode MOSFET, which is designed for the power management of digital and analog systems. It uses a novel and innovative MOSFET structure which provides low on-state resistance, fast switching, and provides voltage protection features. The TP65H035WS\'s application fields range from switching regulation to integrated battery management and power distribution.
The TP65H035WS has a few important advantages such as being fast switching, low gate charge and low on-state drain to source resistance. Its integration of low on-state resistance, fast switching, and voltage protection makes it suitable for parallel applications. This device provides very high current switching capabilities, low gate charge and low on-state resistance for high speed switching. It also provides very low on-state drain to source resistance for low power consumption in battery management applications.
The working principle of this MOSFET is based upon the following basics: when gate voltage (Vg) is low, the channel between the source and the drain is zero or almost zero because there is no inversion layer formation. Consequently, no current can flow between the source and drain. However, when Vg exceeds the threshold voltage (Vth), a conducting channel is formed between the source and the drain and current can flow between the terminals.
The threshold voltage (Vth) of this MOSFET is dependent on the amount of gate current, drain to source voltage (Vds) and the junction temperature. Since Vth is a function of these factors, the MOSFET can be used as a voltage detection switch and a temperature detection circuit. This MOSFET is also suitable for various analog and power management applications as it can sense certain voltage and temperature levels within a system.
The TP65H035WS is versatile and can be used in a variety of applications such as in DC-DC converters, battery management, protection circuits and motor driver circuits. It is also used in customer request-fulfillment systems and data collection systems as a low-voltage detector providing a low on-state drain to source resistance for high-efficiency systems.
In conclusion, the TP65H035WS is a versatile and reliable P-channel enhancement mode MOSFET that can be used in various power management applications. It provides low on-state drain to source resistance, fast switching and voltage protection features, making it an ideal choice for various analog and power management applications such as DC-DC converters and customer request-fulfillment systems.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TP65H050WS | Transphorm | -- | 265 | 650 V 34 A CASCODE GAN FE... |
| TP65H035WS | Transphorm | 16.84 $ | 127 | 650 V 46.5 CASCODE GAN FE... |
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