TP65H050WS Allicdata Electronics
Allicdata Part #:

TP65H050WS-ND

Manufacturer Part#:

TP65H050WS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Transphorm
Short Description: 650 V 34 A CASCODE GAN FET
More Detail: N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-...
DataSheet: TP65H050WS datasheetTP65H050WS Datasheet/PDF
Quantity: 265
Stock 265Can Ship Immediately
Specifications
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 119W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 400V
Vgs (Max): ±20V
Series: --
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Rds On (Max) @ Id, Vgs: 60 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Part Status: Active
Description

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A TP65H050WS is a high-speed N-channel MOSFET transistor device with a wide range of applications. It is typically used to switch high current and voltage loads in a range of applications, including power supplies and other power circuits. Understanding the basics of this device and its working principle will give you a better understanding of its various applications.

Applications

TP65H050WS MOSFETSs are used for a wide range of applications. The most common use for a TP65H050WS is in power circuitry, such as switching high current and voltage loads. This device can also be used for motor control, such as controlling the speed and torque of a motor, and in audio systems, such as amplifiers and high-fidelity recording devices. In addition, it can be used for memory devices, such as DRAMs and SRAMs, and for power transistors and power switches.

The TP65H050WS can also be used for logic circuits, such as in microprocessors, where it can control the flow of current between logic circuits and other circuits. It can also be used for signal switching and signal amplifiers, such as in consumer electronics, where it can be used to control signal signal formats and multiplexers. In addition, this device is often used in communications systems, such as cellular networks, as a way of switching RF signals.

Working Principle

The basic working principle of a TP65H050WS is similar to that of other MOSFETs. This device uses the electrostatic force generated between a channel and the gate to switch current between the source and the drain. The gate is connected to an insulator, and when a voltage is applied to the gate, it creates an electrostatic force between the channel and gate. This force pushes some of the channel electrons into the gate, allowing current to flow from the source to the drain. When the gate voltage is removed, the electrostatic force dissipates, stopping the current from flowing.

One of the most useful features of the TP65H050WS is its low on-resistance, which allows for efficient switching of higher currents and voltages. The device has a high switching speed, and a low gate capacitance, which allows it to be used in high-frequency applications. It is also able to sustain an avalanche breakdown, which further increases its efficiency when used in higher current applications.

Conclusion

The TP65H050WS is a high-speed N-channel MOSFET transistor device with a wide range of applications. Its low on-resistance, high switching speed, and low gate capacitance make it ideal for use in high current, voltage, and frequency applications. Understanding the basics of this device and its working principle will give you a better understanding of its various applications.

The specific data is subject to PDF, and the above content is for reference

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