TPCF8201(TE85L,F,M Discrete Semiconductor Products |
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Allicdata Part #: | TPCF8201(TE85LFMTR-ND |
Manufacturer Part#: |
TPCF8201(TE85L,F,M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET 2N-CH 20V 3A VS-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 3A 330mW Surfa... |
DataSheet: | TPCF8201(TE85L,F,M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3A |
Rds On (Max) @ Id, Vgs: | 49 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 590pF @ 10V |
Power - Max: | 330mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | VS-8 (2.9x1.5) |
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The TPCF8201 (TE85L, F, M) is a high-performance dual-stage FET and MOSFET array. It is designed to provide superior performance in a variety of high-frequency applications, especially in applications requiring high performance and robustness in a small package. It is ideal for RF amplifiers, low noise amplifiers, high-precision analog and digital signal conditioning, and power management applications.
The TPCF8201 features a high performance dual stage FET with a double gate MOSFET devices. The FET is connected in the first stage with a biasing resistor on the source followed by an integrated gate driver connected to the DC path at the drain. The MOSFET is connected in series between the FET and the DC path. The devices have excellent gain and low noise performance over a wide frequency range up to 3 GHz.
The TPCF8201 also features a built-in pullup resistor on the source and a differential input with floating gate structure which enables precision gain control and bias current optimization. The built-in low-pass filter also helps reduce spurious signals that may be caused by high-frequency noise.
The TPCF8201 is designed to provide superior performance in a wide variety of applications such as low-noise amplifiers, active mixers and detectors, and power amplifier stages. In addition, it is designed to be rugged and reliable with a wide temperature range of -40°C to +125°C, and with a low power dissipation of only 0.5 watts at maximum power.
The TPCF8201 is a highly innovative FET and MOSFET array with unmatched levels of performance in high-frequency applications. It provides superior gain, noise, and power efficiency with a relatively small package size. In addition, the built-in pullup resistor and differential input enable precision and optimize bias current for a wide variety of applications. With its wide temperature and power dissipation range, the TPCF8201 is ideal for RF power amplifiers, low-noise amplifiers and any other high-frequency applications that require superior performance and robustness.
The specific data is subject to PDF, and the above content is for reference
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