TPCF8107,LF Allicdata Electronics

TPCF8107,LF Discrete Semiconductor Products

Allicdata Part #:

TPCF8107LFCT-ND

Manufacturer Part#:

TPCF8107,LF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET P-CH 30V 6A VS-8
More Detail: P-Channel 30V 6A (Ta) 700mW (Ta) Surface Mount VS-...
DataSheet: TPCF8107,LF datasheetTPCF8107,LF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: U-MOSVI
Packaging: Cut Tape (CT) 
Part Status: Discontinued at Digi-Key
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): +20V, -25V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 10V
FET Feature: --
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: VS-8 (2.9x1.5)
Package / Case: 8-SMD, Flat Lead
Description

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The TPCF8107 is a type of field-effect transistor (FET) typically used in a variety of consumer and industrial applications. This device belongs to a family of single-gate MOSFETs, and is capable of driving up to 100A of current while consuming very low power. The TPCF8107 is used in a wide range of applications including motor control, power converters and power management.

A field-effect transistor (FET) is a type of device that harnesses the electrical field effect to control the flow of electricity. FETs are made up of two parts: the channel part, which is the physical channel through which current passes, and the gate, which controls the channel by applying an electric field. FETs like the TPCF8107 can be used in various types of circuits, such as power management, motor control, sensing and interface.

The TPCF8107 FET provides excellent performance when used for power management applications. It’s designed to operate in both depletion and enhancement modes, allowing for easy integration into a variety of systems. The device also has low on-resistance and a high current capability, making it suitable for high-current applications such as motor control and power converters.

The TPCF8107 FET is a single-gate MOSFET device, meaning it has only one gate, as opposed to dual-gate or three-gate devices. This type of FET is advantageous because it allows for a much simpler circuit design, as only one gate needs to be driven. In addition, single-gate MOSFETs also have a lower input power requirement, allowing them to be used in battery-powered applications.

The working principle of the TPCF8107 FET is based on the electric field principle. When a voltage is applied to a gate, it creates an electric field which attracts electrons from the channel. The electrons are then drawn across the channel and form a narrow electrical conductor, or a “channel.” The amount of current that can travel through the channel is determined by the voltage applied to the gate. When the voltage is increased, more current can flow through the channel, and when the voltage is decreased, less current can flow through the channel.

The TPCF8107 FET is a single-gate device which makes it well-suited for power management applications. Its low on-resistance and high current capability make it ideal for motor control and power converter applications, while its single-gate design ensures easy circuit integration. Furthermore, it is also compatible with battery-powered applications due to its low input power requirement.

The specific data is subject to PDF, and the above content is for reference

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