Allicdata Part #: | TPCF8102(TE85L,F,M-ND |
Manufacturer Part#: |
TPCF8102(TE85L,F,M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 20V 6A VS8 2-3U1A |
More Detail: | P-Channel 20V 6A (Ta) 700mW (Ta) Surface Mount VS-... |
DataSheet: | TPCF8102(TE85L,F,M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | U-MOSIII |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 1550pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | VS-8 (2.9x1.5) |
Package / Case: | 8-SMD, Flat Lead |
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TPCF8102 is a high-performance, single-channel MOSFET. This FET type was designed to provide low-power, low-noise operations for a wide range of applications. TPCF8102 features excellent RF capability, high-power efficiency, and low on-state resistances. It is available in TE85L, TE85F and TE85M packages.
The key specifications of the TPCF8102 are:
- Low on-state resistance: as low as 25Ω
- Operating voltage range: -20V to 20V
- Maximum gate capacitance: 0.1pF
- Forward transfer admittance: 0.0025 litohm-1
- Reverse transfer admittance: 0.0017 litohm-1
- High junction temperature: 450°C
TPCF8102 offers excellent electrostatic discharge (ESD) protection, which is highly beneficial for applications that are vulnerable to ESD hazards. It also has high level of input and output impedance, making it ideal for use in high-impedance circuits. TPCF8102 is built with a small package size (TE85L, TE85F and TE85M) that allows it to be used in small and cramped spaces.
TPCF8102 is widely used in many fields, such as consumer electronics, industrial automation, power conversion, and power amplification. It is used to provide low-voltage, low-noise power conversion in consumer electronics such as in laptop computers, cell phones and other handheld electronics. It is also used for industrial automation applications such as providing low-voltage power for sensors, controllers, and switches. The TPCF8102 can also be used for power amplification, where it is used as a buffer to reduce the power dissipation in any given circuit.
The working principle of the TPCF8102 is simple. When a voltage is applied to the gate of the FET, it creates a field that modulates the electrical current passing through the channel. The higher the voltage, the greater the control of the current passing through the channel. The FET is turned on, allowing current to flow through it, when the voltage applied to the gate is greater than a certain threshold. When the gate voltage drops below the threshold, the FET is turned off and no current passes through.
In summary, the TPCF8102 is a single-channel MOSFET capable of providing high levels of efficiency and low noise operation. It is available in TE85L, TE85F and TE85M packages and is widely used in a variety of applications, such as consumer electronics, industrial automation, power conversion, and power amplification. Its working principle is based upon the modulation of electrical current passing through the channel by applying a voltage to the gate.
The specific data is subject to PDF, and the above content is for reference
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