TPCF8104(TE85L,F,M Allicdata Electronics

TPCF8104(TE85L,F,M Discrete Semiconductor Products

Allicdata Part #:

TPCF8104FMCT-ND

Manufacturer Part#:

TPCF8104(TE85L,F,M

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET P-CH 30V 6A VS-8
More Detail: P-Channel 30V 6A (Ta) 700mW (Ta) Surface Mount VS-...
DataSheet: TPCF8104(TE85L,F,M datasheetTPCF8104(TE85L,F,M Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: VS-8 (2.9x1.5)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Series: U-MOSIV
Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT) 
Description

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The TE85L,F, and M are members of a family of high-power Field-Effect Transistors (FET) referred to as the TPCF8104. This family of transistors provides high power capability and high current carrying capacity for switching and amplifier applications. It is suitable for use from 0 to 300 Vdc and has a current rating up to 500 Amps.

The TPCF8104 devices are typically used for high power, high speed switching applications. These transistors are extremely efficient, allowing for higher power output in a smaller package. They are also capable of higher switching speed, as well as low gate drive requirements.

The TPCF8104 family of transistors can be divided into two main categories, TE85L and TE85F. The TE85L and TE85F are both single-channel FETs, suitable for operation in the 0- to 300-Vdc range, with a maximum gate-source breakdown voltage of 600 V. The TE85L is a low-voltage (Vce) type, while the TE85F is a high-voltage (Vce) type.

The TE85M is a dual-channel FET that is also suitable for operation up to a maximum Vce of 300 V. The two separate channels in the TE85M can be used for switching and amplification applications.

Working Principle

The basic operating principle of the TPCF8104 family of transistors is similar to that of other Field Effect Transistors. When the transistor is in its active region, with its gate-source voltage Vgs above the threshold voltage Vth, the channel conducts, allowing current to flow from source to drain. The width of the channel is determined by the voltage on the gate electrode, and thus the current handling capability of the device can be changed by adjusting the gate voltage.

When the gate voltage is below the threshold voltage, the channel is effectively turned off and no current will flow from source to drain. This is referred to as the "off state" of the device. In this state, the device is said to be in its "cut-off region". This is the state in which the device normally exists when it is not connected to a circuit.

The TPCF8104 family of transistors is especially well-suited to high power switching applications due to its high power capability and high current carrying capacity. Its low gate drive requirement makes it ideal for applications with limited gate drive capability. Its fast switching speed makes it suitable for high frequency applications.

The specific data is subject to PDF, and the above content is for reference

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