TPCF8101(TE85L,F,M Allicdata Electronics
Allicdata Part #:

TPCF8101(TE85LFMCT-ND

Manufacturer Part#:

TPCF8101(TE85L,F,M

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET P-CH 12V 6A VS-8
More Detail: P-Channel 12V 6A (Ta) 700mW (Ta) Surface Mount VS-...
DataSheet: TPCF8101(TE85L,F,M datasheetTPCF8101(TE85L,F,M Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: VS-8 (2.9x1.5)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Series: U-MOSIII
Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT) 
Description

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TE85L,F,M Field Effect Transistors (FETs) are three-terminal devices which, like the BJT, are capable of control large amounts of current. As opposed to BJTs, however, FETs have greater immunity from crosstalk interference and have much higher input impedances, making them more suitable for applications requiring either high efficiency or electrical isolation. TE85L,F,M FETs, in particular, are widely used in applications such as switching and rectification.

The three letters in the name of the FET indicate its types: the \'L\' indicates a lateral FET, the \'F\' a field-effect transistor, and the \'M\' a metal-oxide field-effect transistor. Each type of FET has its own unique properties and applications.

TE85L lateral FETs are commonly used in applications dealing with voltage switching or current control. Due to their superior switching characteristics,TE85L FETs can be used to switch both AC and DC signals with minimal switching losses. These FETs also possess high thermal resistance and low leakage current, making them ideal for high-temperature environments.

TE85F field-effect transistors are primarily used in DC voltage-controlled applications such as servos and control devices. These FETs have a high input impedance, which makes them useful for high-precision analog voltage control circuits. TE85F FETs are also popular for use in low-voltage linear and switching power supplies.

TE85M metal-oxide field-effect transistors are perhaps the best known type of FET. They are used in applications such as motor speed controls, power switches and rectifiers. Due to their low gate-to-drain capacitance, MOSFETs are often used for high-frequency switching operations. TE85M MOSFETs also have low on-state and reverse-breakdown voltages, making them ideal for applications requiring high voltage isolation.

The working principle of each type of FET is essentially the same, although the details vary depending on the type. Basically, FETs work by creating an electric field between the drain and source, with the gate acting as a control voltage to determine how much current passes through the device. When a voltage is applied to the gate, a field of charge carriers is formed which then "drains" the electric field between the drain and source, thereby controlling the resistance and the amount of current passing through the device.

In summary, TE85L,F,M FETs are essential components for a wide variety of electronic applications. They offer superior switching characteristics, high input impedances, and low on-state voltages that make them well-suited for high-efficiency applications that require electrical isolation. Additionally, their simple working principle makes them easy to configure and use in a variety of circuits.

The specific data is subject to PDF, and the above content is for reference

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