
Allicdata Part #: | TPH4R003NLL1QTR-ND |
Manufacturer Part#: |
TPH4R003NL,L1Q |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 63A 8SOP |
More Detail: | N-Channel 30V 40A (Tc) 1.6W (Ta), 36W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.27173 |
Vgs(th) (Max) @ Id: | 2.3V @ 200µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-SOP Advance (5x5) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta), 36W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14.8nC @ 10V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TPH4R003NL,L1Q is an insulated-gate bipolar transistor, also known as \'IGBT\'. An IGBT is an evolution of the MOSFET (metal-oxide-semiconductor field-effect transistor) that combines the function of the bipolar transistor (a combination of a PN junction and a series of MOSFETs) with the defining features of a MOSFET. Essentially, it is a voltage-controlled power switch that can switch on or off in response to a voltage source. It is a three-terminal device and contains four main components: the gate, the collector, the emitter, and the drain. In the TPH4R003NL,L1Q, the collector is actually a PN junction.
The main application field of the TPH4R003NL,L1Q is power electronics. With its high efficiency, low power loss and high switching frequency, it is used in switching power supplies for computers, consumer electronics, appliances, and many other industrial applications. The IGBT is also used in motor control applications, as it is able to control the motor speed and torque efficiently. Additionally, it is very useful in controlling the speed and torque of electric vehicles due to its high switching frequency and low power loss.
The basic working principle of the TPH4R003NL,L1Q is similar to that of a MOSFET. It is a voltage-controlled device, meaning that its output is controlled by an applied voltage. It uses the electric field created by the applied voltage to create a channel between the source and the drain of the device. This channel is referred to as the "body diode". When the voltage is greater than the device\'s threshold voltage, it turns on. The current then flows from the source to the drain, allowing the device to control the power to the load.
In summary, the TPH4R003NL,L1Q is a three-terminal insulated-gate bipolar transistor used mainly in power electronic applications. Its main feature is its ability to switch on and off quickly, thereby allowing for efficient power control. Additionally, its low power loss and high switching frequency make it suitable for motor control applications.
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