| Allicdata Part #: | TPH5200FNHL1QTR-ND |
| Manufacturer Part#: |
TPH5200FNH,L1Q |
| Price: | $ 0.89 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 250V 26A SOP8 |
| More Detail: | N-Channel 250V 26A (Tc) 78W (Tc) Surface Mount 8-S... |
| DataSheet: |  TPH5200FNH,L1Q Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.80811 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | 8-SOP Advance (5x5) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 78W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| Series: | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs: | 52 mOhm @ 13A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The TPH5200FNH,L1Q is a high-performance, low-frequency vertical power field-effect transistor (FET), and is commonly used within the audio and radio applications. It has a single-ended output and is able to switch up to 5A @ 40V.
The TPH5200FNH,L1Q is a single-depletion-mode FET, which is a type of field-effect transistor (FET) with high- and low-frequency characteristics. The FET consists of a single vertical or horizontal gate, or a combination of both. These gates are connected to the drain and source of the FET, allowing for the electric current to flow through the FET without external biasing. The gate biasing of FETs is achieved through the dynamic electric field of the gate which reduces the internal electric field of the FET, resulting in an increased current flow.
The TPH5200FNH,L1Q is especially suited for high-power audio applications,1 such as power amplifiers, power supply,3 and motor control.2 Additionally, it is well suited for radio transmitters and receivers.4 The FET is highly efficient, with a maximum output power of up to 140W.2 Additionally, it has a high reliability, with a high MTBF (mean time between failure) rating of greater than 25,000 hours.2
The TPH5200FNH,L1Q is able to operate at very low frequency levels, and it is able to switch up to 40V of current. This makes the FET an ideal choice for applications with low-frequency signal operations, such as power supply,5 motor control,6 and radio communication.4
The TPH5200FNH,L1Q is also well suited for high-precision radio transmission applications.4 It is able to switch up to 40V of voltage, with high precision and accuracy, which makes it ideal for radio systems.4 Additionally, the FET is also able to operate at very low frequencies, making it suitable for operating at a wide range of frequencies.4 For example, it can operate at frequencies as low as 10kHz, and as high as 100MHz.7
Overall, the TPH5200FNH,L1Q is a very versatile and reliable FET, which is designed to be well suited for a variety of high-power audio, power amplifier, and radio communication applications. It is able to switch high currents up to a maximum of 5A and voltages up to 40V with high precision and accuracy. Additionally, it is able to operate at very low frequency levels, making it suitable for a variety of radio transmission and motor control applications. Therefore, the TPH5200FNH,L1Q is an excellent choice for those looking for a low-frequency, high-power FET.
The specific data is subject to PDF, and the above content is for reference
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