TPH5900CNH,L1Q Allicdata Electronics
Allicdata Part #:

TPH5900CNHL1QTR-ND

Manufacturer Part#:

TPH5900CNH,L1Q

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 150V 9A 8SOP
More Detail: N-Channel 150V 9A (Ta) 1.6W (Ta), 42W (Tc) Surface...
DataSheet: TPH5900CNH,L1Q datasheetTPH5900CNH,L1Q Datasheet/PDF
Quantity: 4960
5000 +: $ 0.34689
Stock 4960Can Ship Immediately
$ 0.39
Specifications
Vgs(th) (Max) @ Id: 4V @ 200µA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-SOP Advance (5x5)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Series: U-MOSVIII-H
Rds On (Max) @ Id, Vgs: 59 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TPH5900CNH,L1Q is a dual N-channel enhancement-mode MOSFET (metal-oxide-semiconductor field-effect transistor). These devices are commonly used for a variety of applications such as analog, digital, and high voltage switching and power electronics.

A MOSFET is an electrically-operated switch which is vastly used in modern integrated circuits, controlling and amplifying the power signal. It is a component that acts like a voltage-controlled current source or switch. These devices can be either n-channel or p-channel type and consist of a semiconductor body with a source, gate and drain. The TPH5900CNH,L1Q is an n-channel type with a drain connected to a positive voltage and a source connected to ground.

The majority of MOSFETs are enhancement type, meaning they require a positive gate-source voltage to turn on. This is the same case with the TPH5900CNH,L1Q. When the gate voltage exceeds a certain threshold level (VGS) the transistor will conduct current, thus opening the gate and allowing for a current to pass. When VGS drops below the threshold voltage, typically zero volts, the device will not conduct current and thus no current will flow from the source to the drain.

MOSFETs are often used in switching circuits to act as switches or variable resistors and amplifiers. In the case of the TPH5900CNHL1Q, it is frequently utilized for switching high current and/or high voltage applications. Due to its high drain-source breakdown voltage, this device can handle up to 400 volts and continuous drain current of 2.5 A. As a result, it can be employed in such things as DC-DC converters, power supplies, motor controls, and Class D audio amplifiers, among others.

In addition, the TPH5900CNH,L1Q is also ideal for high-speed switching. It has a fast switching speed as well as low on-resistance. This makes it suitable for low power applications such as sample and hold circuits and current limit circuits. Additionally, it is very efficient in utilizing heat and is suitable for high frequency applications thanks to its low input and output capacitances.

The TPH5900CNH,L1Q is an excellent component to use in a vast array of applications due to its fast switching speed, high voltage and current ratings, low RDSon, and low capacitance. It provides a fast, efficient and reliable switching solution for analog, digital, and high voltage circuits.

The specific data is subject to PDF, and the above content is for reference

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