TPN2R203NC,L1Q Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.3V @ 500µA
Package / Case:	8-PowerVDFN
Supplier Device Package:	8-TSON Advance (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	700mW (Ta), 42W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2230pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	34nC @ 10V
Series:	U-MOSVIII
Rds On (Max) @ Id, Vgs:	2.2 mOhm @ 22.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	45A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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This Transistor is one of the most common in the market and is used in a variety of applications. The TPN2R203NC, L1Q is a N-Channel J-FET, meaning that its drains and sources are located opposite its gate. It has a high breakdown voltage of 58 Volts maximum and its drain current is rated at 2 Amps maximum.The TPN2R203NC, L1Q is mainly used for switch applications, digital signal sequencing, signal switching and signal amplification. It is also used for linear control circuits and DC-DC converters.The working principle of the TPN2R203NC, L1Q is based on the fact that when a voltage is applied to the gate, a J-field is created which allows current to flow from source to drain. This field strength is determined by the voltage applied to the gate terminal.When the gate voltage is positive, the J-field is increased, allowing more current to flow from source to drain. Conversely, when the gate voltage is negative, the J-field is decreased, reducing current flow from source to drain. Thus, the TPN2R203NC, L1Q can be used to control the flow of current in a circuit.The TPN2R203NC, L1Q has a minimum gate-source voltage of -2 Volts and a maximum gate-source voltage of +12 Volts. The maximum drain-source voltage is rated at 10 Volts and the maximum source-drain current at 2 Amps. Its on resistance is less than 8 ohms. The TPN2R203NC, L1Q has a very fast switching speed of 4 ns, which makes it ideal for use in high speed digital signal switching and amplifying circuits. Its channel insulation is also very low, so it can be used in circuits where noise sensitivity is an issue.The TPN2R203NC, L1Q is manufactured as a lead-free device, making it RoHS compliant. The device is available in two packages, SOT23 and SOP.The TPN2R203NC, L1Q provides excellent linearity and low overall losses in low voltage circuits. Its lower power consumption and superior switching speed, together with its fast rise and fall times make it an ideal choice for use in a wide range of applications.Overall, the TPN2R203NC, L1Q is an excellent device for low voltage applications and switch circuits. With its high breakdown voltage and excellent attenuation and fast switching speed, it is a great choice for applications where excellent linearity and low losses are required.

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