Allicdata Part #: | TPN30008NHLQTR-ND |
Manufacturer Part#: |
TPN30008NH,LQ |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 80V 9.6A 8TSON |
More Detail: | N-Channel 80V 9.6A (Tc) 700mW (Ta), 27W (Tc) Surfa... |
DataSheet: | TPN30008NH,LQ Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.24687 |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 700mW (Ta), 27W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 920pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 4.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.6A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TPN30008NH,LQ is a laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) designed for high power amplifier applications. It has a wide range of features including its high current capability,Low operating voltage, and low on-resistance. The device is also capable of handling high thermal stresses, making it suitable for high-power, high-reliability applications.
Application Field
The TPN30008NH,LQ is mainly used in the fields of high power amplifiers, DC to DC converters or high power driver. It features low distortion, high efficiency, fast switching, and excellent thermal conductivity. It can be used in various applications such as mobile communication base stations, broadcasting and television transmitters, medical equipment, and test and measurement equipment.
Working Principle
The basic working principle of the TPN30008NH,LQ is as follows. A metal oxide semiconductor field effect transistor (MOSFET) works by using the principle of electrostatic field conduction. When a potential is applied between the source and drain terminals, the electric field generated forms an inversion layer that carriers current. The inversion layer is relatively thin and the current density can be controlled by the gate-source voltage. This makes the device suitable for switching applications where fast switching is desired.
Though the physical size of the TPN30008NH,LQ is smaller than other MOSFETs, it still has a large channel area and can deliver high output current. It is capable of high-frequency operation and features low on-resistance, making it suitable for higher frequency applications. The device also features a wide drain-source voltage range, which makes it suitable for a variety of DC/DC converters.
The TPN30008NH,LQ is also capable of handling high thermal stresses, making it suitable for high power, high reliability applications. Its maximum drain current is up to 16A. Paired with its wide temperature range and fast rise time, the TPN30008NH,LQ is an ideal solution for many high-power applications.
The TPN30008NH,LQ is a reliable device and is designed to last for long periods of time under highest operational conditions. It comes with a wide range of safety features such as over-voltage protection, over-current protection, thermal shut-down, and under voltage latch out.
With its wide range of features and reliability, the TPN30008NH,LQ is an ideal solution for high power applications. It is commonly used in RF power amplifiers, DC/DC converters, and other high-power applications.
The specific data is subject to PDF, and the above content is for reference
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