TT8U1TR Discrete Semiconductor Products |
|
Allicdata Part #: | TT8U1TR-ND |
Manufacturer Part#: |
TT8U1TR |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 20V 2.4A TSST8 |
More Detail: | P-Channel 20V 2.4A (Ta) 1.25W (Ta) Surface Mount 8... |
DataSheet: | TT8U1TR Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.18909 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 8-TSST |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 10V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 6.7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 2.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The TT8U1TR is one of the many different types of transistors available on the market today. It is a field effect transistor, or FET for short, and is also known as a single MOSFET. This type of transistor is made up of a silicon—germanium (Si-Ge) epitaxial substrate and a polysilicon gate substrate, and it has a wide range of applications in both digital and analog circuits. In this article, we will discuss the TT8U1TR\'s application field and working principle.
Application Field
The TT8U1TR transistor is used in a variety of applications, such as high frequency communication, switching, speed control, hammering control, and various power management duties. This type of transistor is particularly useful in power management systems, as it has a low structure resistance, high current handling capacity, and low power dissipation. This makes it a great choice for applications that require a high degree of efficiency, such as those in computer systems, solar energy systems, and automotive applications. Furthermore, the TT8U1TR transistor has excellent transient temperature performance, allowing it to be used in high temperature environments without suffering any adverse effects.
Working Principle
The working principle of the TT8U1TR is based on the principle of electrostatic control. It works by using a voltage applied to the channel between the source and the drain, which is called the gate-to-source voltage. By controlling this voltage, the transistor can be switched on or off, thereby controlling the mode of operation. The gate-to-source voltage is typically supplied by a voltage source or current source, or even a combination of both. When the gate-to-source voltage is increased, the transistor is turned on, allowing it to pass current between the source and the drain. When the gate-to-source voltage is decreased, the transistor is turned off, thereby stopping the current flow between the source and the drain.
Conclusion
The TT8U1TR is a single FET that is useful in a variety of applications, particularly those that require high efficiency. It works by using a gate-to-source voltage to control the state of the transistor, allowing it to be switched on or off and therefore regulating the current flow between the source and the drain. This transistor is also temperature resistant, allowing it to be used in high temperature environments without causing any adverse effects. Thanks to its properties, the TT8U1TR has become an increasingly popular choice for a variety of digital and analog circuits.
The specific data is subject to PDF, and the above content is for reference
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...