TT8U2TR Discrete Semiconductor Products |
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Allicdata Part #: | TT8U2TR-ND |
Manufacturer Part#: |
TT8U2TR |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 20V 2.4A TSST8 |
More Detail: | P-Channel 20V 2.4A (Ta) 1.25W (Ta) Surface Mount 8... |
DataSheet: | TT8U2TR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10556 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 8-TSST |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 10V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 6.7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 2.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TT8U2TR is a single-gate field-effect transistor (FET). It is a popular choice for many applications due to its low cost and compact size. The TT8U2TR is a unipolar device, meaning it operates by one type of charge carriers - electrons are the majority carriers./
The fundamental idea behind FETs is to use an electric field to control the current flow in a semiconductor channel. The TT8U2TR has a gate terminal which provides this electric field, and the drain and source terminals from which the current flows. The TT8U2TR is also a metal-oxide-semiconductor FET (MOSFET). This type of FET uses the oxide layer as an insulator between the gate and the channel, allowing it to be easily driven by a small voltage applied to the gate.
The main working principle of the TT8U2TR is that the current flowing through between the drain and source terminals is proportional to the electric field at the gate terminal. When a positive voltage is applied to the gate, the electric field in the channel increases, attracting more electrons to the channel. This increases the current flow between the drain and source terminals. Conversely, when the voltage applied to the gate is negative, the electric field in the channel decreases, attracting fewer electrons, and the current flow is reduced.
The TT8U2TR is primarily used in low-frequency circuits for switching and amplification applications. It is often used in high-voltage or low-current circuits to provide isolation from the power supply, or to reduce the current consumption from the circuit. It is also commonly used as an inverter, where the source and drain properties are checked for high or low signals. The TT8U2TR can also be used in amplifying and attenuating circuits, to further enforce signals. This is often used in audio and video equipment, as well as sensing applications.
The TT8U2TR is a highly useful device, due to its low cost, small size, and broad application variety. The simple working principle, coupled with its low power consumption, makes it a popular choice for many application fields.
The specific data is subject to PDF, and the above content is for reference
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