UDZSTE-173.0B Allicdata Electronics

UDZSTE-173.0B Discrete Semiconductor Products

Allicdata Part #:

UDZSTE-173.0BTR-ND

Manufacturer Part#:

UDZSTE-173.0B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ZENER 3V 200MW UMD2
More Detail: Zener Diode 3V 200mW ±3% Surface Mount UMD2
DataSheet: UDZSTE-173.0B datasheetUDZSTE-173.0B Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Voltage - Zener (Nom) (Vz): 3V
Tolerance: ±3%
Power - Max: 200mW
Impedance (Max) (Zzt): 120 Ohms
Current - Reverse Leakage @ Vr: 50µA @ 1V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Base Part Number: UDZ3V0
Description

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The UDZSTE-173.0B diode is classified as a single Zener diode and is used in a wide range of applications. Generally, it performs the role of a voltage regulator, allowing a predetermined level of voltage to pass through it regardless of actual conditions. It also functions as a reverse-bias rectifier in circuits depending on its type. The UDZSTE-173.0B Zener diode differs from other types of diodes by its ability to maintain a constant voltage regardless of the amount of current flowing through it. Additionally, the UDZSTE-173.0B diode can handle a wide range of current and voltage levels and is able to adjust the output voltage based on external demands.

The UDZSTE-173.0B Zener diode is especially useful in voltage regulation where an accurate and stable output is necessary. It is often used in devices such as computers, medical equipment, communication equipment, and space devices. It is also suitable for providing a higher level of voltage protection and can be inserted between batteries and LED drivers in order to protect LED drivers from overvoltage or undervoltage shocks.

The working principle of the UDZSTE-173.0B Zener diode is based on the fact that when a Zener diode is connected in reverse bias, a maximum reverse Voltage can be applied. To cater for higher currents, junction widths of the diode must be large and these diodes are formed to this end. The reverse breakdown voltage is determined by the doping of the diode. The diode will start to conduct a current when the applied reverse voltage is equal to the Zener breakdown voltage, allowing only a controlled voltage to be transmitted through it.

When a UDZSTE-173.0B Zener diode passes current, it will generate a voltage drop across its zener region, causing it to dissipate a small amount of power. This is the reason why it is used in low-power applications. The power dissipated is determined by the following equation:

P=I*Vz, where I is the current through the diode, and Vz is the Zener voltage.

For applications requiring higher power ratings, the UDZSTE-173.0B can be combined with components like resistors to create a voltage regulator, allowing the UDZSTE-173.0B Zener diode to handle higher power amounts.

In summary, the UDZSTE-173.0B diode is a single Zener diode used in a wide range of applications and is extremely useful in voltage regulation. It is able to maintain a constant output voltage and handle a range of current and voltage levels, while maintaining low-power dissipation. With the help of additional components, the UDZSTE-173.0B Zener diode can be used in higher power applications, making it an incredibly versatile and useful component.

The specific data is subject to PDF, and the above content is for reference

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