UDZSTE-1711B Allicdata Electronics

UDZSTE-1711B Discrete Semiconductor Products

Allicdata Part #:

UDZSTE-1711BTR-ND

Manufacturer Part#:

UDZSTE-1711B

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ZENER 11V 200MW UMD2
More Detail: Zener Diode 11V 200mW ±2% Surface Mount UMD2
DataSheet: UDZSTE-1711B datasheetUDZSTE-1711B Datasheet/PDF
Quantity: 9000
1 +: $ 0.04000
10 +: $ 0.03880
100 +: $ 0.03800
1000 +: $ 0.03720
10000 +: $ 0.03600
Stock 9000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Voltage - Zener (Nom) (Vz): 11V
Tolerance: ±2%
Power - Max: 200mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 8V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Base Part Number: UDZ11
Description

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Diodes - Zener - Single

UDZSTE-1711B application field and working principle

The UDZSTE-1711B is a type of single zener diode that can be used in many different applications. It is a type of semiconductor device that utilizes a reverse-biased electrical junction to restrict current to flow in one direction only. It enables an electric current to “flow” in one direction and prevents it from “flowing” back in the opposite direction. This zener diode is designed to provide a regulated output voltage. It is especially used in applications where a regulated voltage is needed, such as DC-DC convertor, or in radio frequency circuit.

The UDZSTE-1711B is a single diode with a built-in zener breakdown voltage of 17.11V and a maximum power rating of 50mW. It also features a power dissipation range of 2V to 25V and a low Junction Capacitance of 0.02pF. The working temperature of this diode ranges from -50°C to 150°C. It also features a standard packaging of 0.200” TO-252-3.

The zener diode works based on PN junctions having two regions i.e. the anode and the cathode. When the anode of a zener diode is negatively charged with respect to the cathode, the diode is said to be forward-biased and current begins to flow through the diode. As the voltage continues to increase, the zener junction reaches a point called zener breakdown, where a strong electric field is created in the depletion layer and current begins to flow more strongly, clamping the voltage across the diode at the zener breakdown voltage. This phenomenon is called avalanche breakdown.

The working principle of the UDZSTE-1711B single zener diode is simple. When the voltage across the diode is higher or equal to the zener breakdown voltage, the effect of the reverse-biased PN junction gives complete control to the Voltage regulator by clamping the output terminal of the voltage regulator at the Zener voltage.

The UDZSTE-1711B single zener diode has several application fields such as in DC-DC Converters, surge protection circuits, voltage regulators, isolation amplifiers, voltage clamps, and many more. It is widely used in electronic circuits to regulate a stable output voltage. In addition to its applications in the field of electronics, it can also be used in industrial applications where excess voltage surge is a special concern such as In cars, solar cells, and communication systems.

In conclusion, the UDZSTE-1711B single zener diode is an efficient electronic device designed to provide a regulated output voltage. It is typically used in applications where a zener breakdown is required to regulate the output voltage and can be found in many different application fields including the fields of electronics, automotive, solar cells, and communication systems.

The specific data is subject to PDF, and the above content is for reference

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