
UDZSTE-1711B Discrete Semiconductor Products |
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Allicdata Part #: | UDZSTE-1711BTR-ND |
Manufacturer Part#: |
UDZSTE-1711B |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 11V 200MW UMD2 |
More Detail: | Zener Diode 11V 200mW ±2% Surface Mount UMD2 |
DataSheet: | ![]() |
Quantity: | 9000 |
1 +: | $ 0.04000 |
10 +: | $ 0.03880 |
100 +: | $ 0.03800 |
1000 +: | $ 0.03720 |
10000 +: | $ 0.03600 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Voltage - Zener (Nom) (Vz): | 11V |
Tolerance: | ±2% |
Power - Max: | 200mW |
Impedance (Max) (Zzt): | 30 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 8V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-90, SOD-323F |
Supplier Device Package: | UMD2 |
Base Part Number: | UDZ11 |
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Diodes - Zener - Single
UDZSTE-1711B application field and working principle
The UDZSTE-1711B is a type of single zener diode that can be used in many different applications. It is a type of semiconductor device that utilizes a reverse-biased electrical junction to restrict current to flow in one direction only. It enables an electric current to “flow” in one direction and prevents it from “flowing” back in the opposite direction. This zener diode is designed to provide a regulated output voltage. It is especially used in applications where a regulated voltage is needed, such as DC-DC convertor, or in radio frequency circuit.
The UDZSTE-1711B is a single diode with a built-in zener breakdown voltage of 17.11V and a maximum power rating of 50mW. It also features a power dissipation range of 2V to 25V and a low Junction Capacitance of 0.02pF. The working temperature of this diode ranges from -50°C to 150°C. It also features a standard packaging of 0.200” TO-252-3.
The zener diode works based on PN junctions having two regions i.e. the anode and the cathode. When the anode of a zener diode is negatively charged with respect to the cathode, the diode is said to be forward-biased and current begins to flow through the diode. As the voltage continues to increase, the zener junction reaches a point called zener breakdown, where a strong electric field is created in the depletion layer and current begins to flow more strongly, clamping the voltage across the diode at the zener breakdown voltage. This phenomenon is called avalanche breakdown.
The working principle of the UDZSTE-1711B single zener diode is simple. When the voltage across the diode is higher or equal to the zener breakdown voltage, the effect of the reverse-biased PN junction gives complete control to the Voltage regulator by clamping the output terminal of the voltage regulator at the Zener voltage.
The UDZSTE-1711B single zener diode has several application fields such as in DC-DC Converters, surge protection circuits, voltage regulators, isolation amplifiers, voltage clamps, and many more. It is widely used in electronic circuits to regulate a stable output voltage. In addition to its applications in the field of electronics, it can also be used in industrial applications where excess voltage surge is a special concern such as In cars, solar cells, and communication systems.
In conclusion, the UDZSTE-1711B single zener diode is an efficient electronic device designed to provide a regulated output voltage. It is typically used in applications where a zener breakdown is required to regulate the output voltage and can be found in many different application fields including the fields of electronics, automotive, solar cells, and communication systems.
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