
UDZSTE-176.8B Discrete Semiconductor Products |
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Allicdata Part #: | UDZSTE-176.8BTR-ND |
Manufacturer Part#: |
UDZSTE-176.8B |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 6.8V 200MW UMD2 |
More Detail: | Zener Diode 6.8V 200mW ±2% Surface Mount UMD2 |
DataSheet: | ![]() |
Quantity: | 9000 |
1 +: | $ 0.04000 |
10 +: | $ 0.03880 |
100 +: | $ 0.03800 |
1000 +: | $ 0.03720 |
10000 +: | $ 0.03600 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Voltage - Zener (Nom) (Vz): | 6.8V |
Tolerance: | ±2% |
Power - Max: | 200mW |
Impedance (Max) (Zzt): | 40 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 3.5V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-90, SOD-323F |
Supplier Device Package: | UMD2 |
Base Part Number: | UDZ6V8 |
Description
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Diodes - Zener - SingleThe UDZSTE-176.8B is a single type of zener diode that is commonly used in a wide range of applications. It has the ability to maintain a constant breakdown voltage over a wide range of current, making it a reliable and effective solution for various applications. In this article, we will look into the application field and working principle of UDZSTE-176.8B.The UDZSTE-176.8B is a zener diode with a breakdown voltage of 176.8 volts. This type of diode can provide protection against voltage spikes or surges, making it ideal for use in power supplies, medical equipment, and other sensitive electronic devices. It is also commonly used in the manufacturing of solar cells, as the constant breakdown voltage helps to maintain the cell’s voltage output.The UDZSTE-176.8B is also a popular choice for EMI suppression applications, as the diode helps to absorb radio frequency emissions. It is also used in circuits to provide overvoltage protection. This is done by allowing excess voltage to be diverted away from sensitive components, thus preventing damage.The working principle of a zener diode is quite simple. A zener diode consists of two semiconductor layers which are joined together. When an external voltage is applied to this diode, a certain point is reached where the electric field across the junction exceeds a critical value, and the voltage between the two layers is reduced to a stable, fixed level. This is called the breakdown or zener voltage.The UDZSTE-176.8B is constructed using a two layer semiconductor, and is designed to maintain a breakdown voltage of 176.8 volts across the junction. The diode is designed to conduct in one direction and block in the other, and is also designed to be highly temperature stable, with a low thermally sensitive voltage. This makes the diode suitable for use in a variety of applications, including automotive and medical.Overall, the UDZSTE-176.8B is a reliable and cost effective single type of zener diode that can provide a constant breakdown voltage in a wide range of applications. Its ability to absorb radio frequency emissions and provide overvoltage protection makes it an ideal choice for a variety of electronic devices and systems.The specific data is subject to PDF, and the above content is for reference
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